|
" Ultra clean processing of semiconductor surfaces IX (UCPSS 2008) : "
edited by Paul Mertens, Marc Meuris, Marc Heyns.
Document Type
|
:
|
BL
|
Record Number
|
:
|
725554
|
Doc. No
|
:
|
b545273
|
Main Entry
|
:
|
edited by Paul Mertens, Marc Meuris, Marc Heyns.
|
Title & Author
|
:
|
Ultra clean processing of semiconductor surfaces IX (UCPSS 2008) : : 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) held in Bruges, Belgium, September 22-24, 2008\ edited by Paul Mertens, Marc Meuris, Marc Heyns.
|
Publication Statement
|
:
|
Stafa-Zuerich: Trans Tech, [2009] ©2009
|
Series Statement
|
:
|
Diffusion and defect data., Pt. B,, Solid state phenomena ;, v. 145-146.
|
Page. NO
|
:
|
(396 pages) : illustrations (some color).
|
ISBN
|
:
|
3038132829
|
|
:
|
: 9783038132820
|
Contents
|
:
|
Ultra Clean Processing of Semiconductor Surfaces IX; Acknowledgements; Committees and Sponsors; Photo; Preface; Table of Contents; I. Physical Cleaning Methods; Direct Observation of Single Bubble Cavitation Damage for MHz Cleaning; High Speed Imaging of 1 MHz Driven Microbubbles in Contact with a Rigid Wall; Characterization of a Cavitation Bubble Structure at 230 kHz: Bubble Population, Sonoluminescence and Cleaning Potential ; Impact of Megasonic Activation with Different Chemistries on Silicon Surface in Single Wafer Tool; Impacts of Ionization Potentials and Megasonic Dispersion. The Influence of Standing Waves on Cleaning with a Megasonic NozzleMegasonic Sweeping and Silicon Wafer Cleaning; Removal of Nano-Particles by Aerosol Spray: Effect of Droplet Size and Velocity on Cleaning Performance ; High Aspect Ratio Contact Clean Study in 58nm Flash Device; High Velocity Aerosol Cleaning with Organic Solvents: Particle Removal and Substrate Damage ; Cleaning Technique Using High-Speed Steam-Water Mixed Spray; Pattern Collapse and Particle Removal Forces of Interest to Semiconductor Fabrication Process; Applications of Electrostatic Spray Techniques to Surface Cleaning. Analyzing the Collapse Force of Narrow Lines Measured by Lateral Force AFM Using an Analytical Mechanical ModelII. Particle Interactions; Reduced Particle Removal Efficiency Upon Wafer Storage; Local Distribution of Particles Deposited on Patterned Surfaces; Particle Retention Mechanism of Filter in High Temperature Chemical; Improving Process Control for Copper Electroplating through Filter Membrane Optimization; Particle --;Wafer Interactions in Semiaqueous Silicon Cleaning Systems; III. Drying. Drying of High Aspect Ratio Structures: A Comparison of Drying Techniques via Electrical Stiction AnalysisRelationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean; IV. Metrology; Complementary Metrology within a European Joint Laboratory; Highly Sensitive Detection of Inorganic Contamination; Trace Metallic Contamination Analysis on Wafer Edge and Bevel by TXRF and VPD-TXRF; Surface Potential Difference Imaging Applied to Wet Clean Monitoring; V. Contamination Control; Metallic Contamination Control in Leading-Edge ULSI Manufacturing. Molybdenum Contamination in Silicon: Detection and Impact on Device PerformancesDeveloping a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination; Impact of Metal-Ion Contaminated Silica Particles on Gate Oxide Integrity; Monitoring System for Airborne Molecular Contamination (AMC) in Semiconductor Manufacturing Areas and Micro-Environments; Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology.
|
Abstract
|
:
|
The contents of this publication include every conceivable issue related to contamination, cleaning and surface preparation during mainstream large-scale integrated circuit manufacture. Typically, silicon is used as the main semiconductor substrate. However, other semiconducting materials such as SiGe and SiC are currently being used in the source-sink junction areas, and materials such as Ge and III-V compounds are being considered for the transistor channel region of future-generation devices. This special collection covers every aspect of ultra-clean technology as applied to large-scale dev.
|
Subject
|
:
|
SCIENCE -- Physics -- Electricity.
|
Subject
|
:
|
SCIENCE -- Physics -- Electromagnetism.
|
Subject
|
:
|
Semiconductors -- Surfaces -- Congresses.
|
LC Classification
|
:
|
QC611.6.S9E358 9999
|
Added Entry
|
:
|
Marc Heyns
|
|
:
|
Marc Meuris
|
|
:
|
Paul Mertens
|
| |