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" Experimental and simulation study of gate controlled resistance switching memory "
Nurunnahar Islam Mou
Tabib-Azar, Massood
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Latin Dissertation
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| Language of Document
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English
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| Record Number
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804223
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| Doc. No
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TL49045
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| Call number
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1844993705; 10163525
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| Main Entry
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Mian, Mohammad Rajibul Islam
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| Title & Author
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Experimental and simulation study of gate controlled resistance switching memory\ Nurunnahar Islam MouTabib-Azar, Massood
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| College
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The University of Utah
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| Date
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2016
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| Degree
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M.S.
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| field of study
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Electrical and Computer Engineering
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| student score
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2016
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| Page No
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92
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| Note
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Committee members: Mastrangelo, Carlos; Simpson, Jamesina
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| Note
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Place of publication: United States, Ann Arbor; ISBN=978-1-369-18216-3
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| Abstract
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Scaling limitation of current memory technology requires invention of a new class of memory that has high density, fast programming and access time, as well as good nonvolatility. Resistive switching memories or memristors are good candidates for such application. Anticipated advantages of these devices include long retention time, high access speed, endurance, low power, high density, and scalability. Memristors were first proposed theoretically by L. Chua in 1971, but it did not come into practical implementation until 2008 when researchers in the HP lab fabricated and recognized the first ever memristor.
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| Subject
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Electrical engineering
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| Descriptor
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Applied sciences;Gated memristor;Memristor
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| Added Entry
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Tabib-Azar, Massood
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Electrical and Computer EngineeringThe University of Utah
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