Group III-V Nanowire Growth and Characterization

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" Group III-V Nanowire Growth and Characterization "
Wang, Mingjin Bowers, John E

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	898850
Doc. No	:	TL1jx2h6q9
Main Entry	:	Cole, Emily Christine Cooper
Title & Author	:	Group III-V Nanowire Growth and Characterization\ Wang, MingjinBowers, John E
Date	:	2016
student score	:	2016
Abstract	:	Electronic and optical devices typically use bulk or quantum wells today, but nanowires are promising building blocks for future devices, due to their structural characterizations of larger aspect ratio and smaller volume. In situ growth of semiconductor devices is extremely attractive, as it doesn’t require expensive lithography treatment. Over the past ten years, a great deal of work has been done to explore NW, incorporation of group III-V materials and band engineering for the electronic and optoelectronic devices. Because pseudo one-dimensional heterostructures may be grown without involving lattice mismatch defects, NWs may give rise to superior electronic, photonic, and magnetic performances as compared to conventional bulk or planar structures.
Added Entry	:	Wang, Mingjin
Added Entry	:	UC Santa Barbara