| Document Type
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BL
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| Record Number
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1034162
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| Doc. No
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b788532
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| Main Entry
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Maiti, C. K.
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| Title & Author
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Strained-Si heterostructure field effect devices /\ C.K. Maiti, S. Chattopadhyay, L.K. Bera.
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| Publication Statement
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New York :: Taylor & Francis,, ©2007.
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| Series Statement
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Series in materials science and engineering
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| Page. NO
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1 online resource (423 pages) :: illustrations.
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| ISBN
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1420012347
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: 9781420012347
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0750309938
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9780750309936
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| Bibliographies/Indexes
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Includes bibliographical references and index.
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| Contents
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Computer generated contents: Chapt. 1. Introduction -- chapt. 2. Strain engineering in microelectronics -- chapt. 3. Strain-engineered substrates -- chapt. 4. Electronic properties of engineered substrates -- chapt. 5. Gate dielectrics on engineered substrates -- chapt. 6. Heterostructure sige/sigec MOSFETS -- chapt. 7. Strained-si heterostructure MOSFETS -- chapt. 8. Modeling and simulation of hetero-FETS.
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| Abstract
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A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS. After an introduction to the material.
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| Subject
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Metal oxide semiconductor field-effect transistors.
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Silicon-- Electric properties.
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Metal oxide semiconductor field-effect transistors.
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Silicon-- Electric properties.
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TECHNOLOGY ENGINEERING-- Electronics-- Transistors.
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| Dewey Classification
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621.3815/284
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| LC Classification
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TK7871.95.M27 2007
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| Added Entry
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Bera, L. K.
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Chattopadhyay, Swapan,1952-
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| Parallel Title
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Strained silicon heterostructure field effect devices
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