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" The Cleaning and Passivation of Germanium X-Ray Photodiodes "
Garafalo, Anne
Hunt, Charles E.
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Latin Dissertation
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| Language of Document
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English
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| Record Number
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1108548
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| Doc. No
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TLpq2466316210
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| Main Entry
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Garafalo, Anne
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Hunt, Charles E.
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| Title & Author
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The Cleaning and Passivation of Germanium X-Ray Photodiodes\ Garafalo, AnneHunt, Charles E.
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| College
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University of California, Davis
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| Date
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2020
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| student score
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2020
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| Degree
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M.S.
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| Page No
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51
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| Abstract
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For high performance Ge x-ray photodiodes, it is vital that the quality Ge interfacial layer is examined, as the type of layer, cleaning method, and deposition method used have a large impact on the performance of the devices. In this study Ge surfaces and mesas were cleaned with UV Ozone, thermal annealing, and cyclic HCl etches. Next Hf3N4 was deposited using atomic layer deposition, onto the surfaces of Ge photodiodes and MIS capacitors to form the passivation layers and compared to polyimide passivated photodiodes. AFM measurements allow for comparing the RMS roughness of the germanium surfaces with different cleaning methods. XPS measurements indicate which cleaning methods are most effective at removing germanium oxides and organic species from the surface. Taking voltage versus current measurements allow for comparing the dark current, breakdown voltage and ideality factor of a Hf3N4 passivated germanium photodiode with a polyimide passivated germanium photodiode. The interface trap density is calculated from the conductance method by measuring the capacitance versus voltage of Hf3N4 passivated germanium MIS capacitors.
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Electrical engineering
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Materials science
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