Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Product...

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" Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology "
Gong, Ming-Jia Mecca Voinigescu, Sorin P.

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	1108844
Doc. No	:	TLpq2468574845
Main Entry	:	Gong, Ming-Jia Mecca
	:	Voinigescu, Sorin P.
Title & Author	:	Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology\ Gong, Ming-Jia MeccaVoinigescu, Sorin P.
College	:	University of Toronto (Canada)
Date	:	2020
student score	:	2020
Degree	:	M.A.S.
Page No	:	86
Abstract	:	This thesis investigates the design of spin qubit readout systems in a production 22-nm FDSOI CMOS technology for monolithically integrated quantum processors operated at temperatures above 4 K. At 300 K, the readout amplifier was measured to have a transimpedance gain of 108 dBΩ with 8 GHz of bandwidth, S22 output matching < -10 dB from 0 to 60 GHz and an input-referred noise current of < 1 pA/√Hz up to 8 GHz. Simulated results at 12 K showed a transimpedance gain of 112 dBΩ with 11 GHz of bandwidth, S22 < -7 dB from 0 to 40 GHz and a minimum input noise current of 188 fA/√Hz. When integrated with a p-type quantum dot structure, measurements at 300 K showed a peak S21 of 18.9 dB with 8 GHz of bandwidth and S22 < -10 dB up to 60 GHz, while dissipating < 4.5 mW of power.
Subject	:	Electrical engineering
	:	Quantum physics