Analysis of new deep submicrometer metal-oxide-semiconductor device structures

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" Analysis of new deep submicrometer metal-oxide-semiconductor device structures "
M. A. Khan

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	1112763
Doc. No	:	TLpq303981442
Main Entry	:	M. A. Khan
Title & Author	:	Analysis of new deep submicrometer metal-oxide-semiconductor device structures\ M. A. Khan
College	:	Arizona State University
Date	:	1992
student score	:	1992
Degree	:	Ph.D.
Page No	:	164
Abstract	:	The behavior of four deep sub-micron n-channel metal oxide semiconductor (n-MOS) structures are described and detailed in this dissertation. The oxide thickness is selected as 10 nanometer and the effective physical channel length is approximately 0.12 mum. The physical and electrical characteristics of these devices are simulated on the device simulation program PISCES. One of the devices simulated has a very thin layer of tungsten as the gate electrode. The Tungsten layer extends under the side wall spacers, giving the cross section of the gate the appearance of an inverted letter 'T'. The electrical characteristics of the inverse-T tungsten gate (ITTG) device are compared to those of the inverse-T poly gate (ITPG) device and the Short Poly Gate (SPG) device. It is shown that the ITTG has higher transconductance (gm) and larger drain saturation current, compared with those parameters for the ITPG and SPG. The device structures utilize a punch-through implant to prevent punch-through break-down. The simulation results show that the ITTG has a reduced vertical electric field, thus higher oxide breakdown voltage. The ITTG structures also have lower subthreshold voltage swing and smaller leakage currents due to drain induced barrier lowering. The simulation results also show that the ITTG device has a lateral electric field less than 5.5 usd\timesusd 10 V/cm for reliable device operation. By comparing results, it is observed that the use of the Tungsten gate electrode as the inverse-T gate cross section results in devices with excellent performance and improved electrical characteristics. Hence, the ITTG structures offer highly reliable and small size devices which are most suitable for modern, high performance, high density digital circuit applications.
Subject	:	Applied sciences
	:	Electrical engineering
	:	Electrical engineering
	:	Electromagnetism
	:	metal oxide semiconductor
	:	Pure sciences