Simulation of high-frequency semiconductor devices using a full electromagnetic wave model

مرکز و کتابخانه مطالعات اسلامی به زبان های اروپایی

منو

" Simulation of high-frequency semiconductor devices using a full electromagnetic wave model "
M. A.-A. Al-Sunaidi

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	1112899
Doc. No	:	TLpq304168602
Main Entry	:	M. A.-A. Al-Sunaidi
Title & Author	:	Simulation of high-frequency semiconductor devices using a full electromagnetic wave model\ M. A.-A. Al-Sunaidi
College	:	Arizona State University
Date	:	1995
student score	:	1995
Degree	:	Ph.D.
Page No	:	154
Abstract	:	Modern microwave device technology aims at the realization of smaller and faster circuits. As the device size shrinks, the transit time of the carriers becomes comparable to the characteristic relaxation times and to the period of the electromagnetic (EM) wave propagating along the device width. In order to incorporate the short-gate effects and the EM wave effects, a full-wave methodology is needed to include and account for device-wave interactions. The full-wave model couples three-dimensional solutions of the electric and magnetic fields to a self-consistent electron transport model which is based on the hydrodynamic equations. In this dissertation, the numerical solution methods are based on the finite-difference (FD) formulations. To overcome the computational intensity of the full-wave model, parallel algorithms were developed, and the numerical simulations were performed on a massively parallel machine (MasPar). Successful numerical simulations of typical microwave GaAs metal-semiconductor field-effect transistors (MESFET) devices with 0.2 mum gate lengths were carried out using the full-wave model. The analysis is performed by following the propagation of the EM wave inside the device and its interactions with the conduction electrons. The results show that electron-wave interactions take place along the width of the device. These effects are demonstrated for the first time in a microwave transistor. The interactions are present as nonlinear energy build-ups along the propagation direction as energy exchange takes place between the electrons and the propagating wave. It is found that the wave effects have a great impact on the behavior of the device. The results of this research present an important contribution to both device optimization and monolithic microwave integrated circuit (MMIC) system design.
Subject	:	Applied sciences
	:	Electrical engineering
	:	microwaves