MOCVD-grown visible light-emitting devices using native oxides of compound semiconductors

مرکز و کتابخانه مطالعات اسلامی به زبان های اروپایی

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" MOCVD-grown visible light-emitting devices using native oxides of compound semiconductors "
M. R. Islam R. D. Dupuis

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	1113132
Doc. No	:	TLpq304282876
Main Entry	:	M. R. Islam
	:	R. D. Dupuis
Title & Author	:	MOCVD-grown visible light-emitting devices using native oxides of compound semiconductors\ M. R. IslamR. D. Dupuis
College	:	The University of Texas at Austin
Date	:	1996
student score	:	1996
Degree	:	Ph.D.
Page No	:	100
Abstract	:	Visible light emitting devices based on the InAlGaP material system are of great technological interest because of their applications in optical information processing such as high-definition television (HDTV) and plastic-fiber-based telecommunication. The high-power performance of these devices are limited by the low conduction-band offset available in this material system. A novel distributed electron wave reflector in the form of an InAlP/InGaP strain modulated aperidic superlattice heterobarrier (SMASH) structure has been proposed and shown to effectively increase the electron confinining potential. InAlP/InGaP light-emitting diodes using the SMASH barrier exhibited enhanced light output compared to similar devices utilizing other conventional barrier structures. The effects of the native oxides of compound semiconductors on the electrical and optical properties of light-emitting materials and devices were also studied. Thermally grown native oxides of Al-rich compound semiconductors are similar in nature to SiO2 and is formed in much the same way. Their insulating properties and low index of refraction (n 1.6) have made them useful for electrical and optical confinement in various light emitting device structures. The native oxides derived from InAlP and AlGaAs were compared in terms of their effect on the luminescence properties of InGaP and GaAs. Extensive photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements indicated that a "phosphorus" oxide (derived from InAlP) possibly has a superior interface quality compared to an "arsenic" oxide such as resulting from the oxidation of AlGaAs. Lasing action was demonstrated in an undoped, photopumped vertical-cavity InAlP/InGaP structure employing the SMASH barrier and the native oxide/semiconductor DBR mirrors.
Subject	:	Applied sciences
	:	Electrical engineering
	:	indium gallium aluminum phosphide
	:	Materials science