رکورد قبلیرکورد بعدی

" CAD modeling and simulation of P-I-N diode attenuator "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 1113274
Doc. No : TLpq304356557
Main Entry : B. H. S. Mohammad
: B. P. Johnson
Title & Author : CAD modeling and simulation of P-I-N diode attenuator\ B. H. S. MohammadB. P. Johnson
College : University of Nevada, Reno
Date : 1997
student score : 1997
Degree : M.S.
Page No : 141
Abstract : The objective of this research is to model RF PIN diode variable attenuators by generating accurate models for commercially available PIN diodes. The parameters are extracted from manufacturer's data sheets using curve fitting programs. In particular, the RF resistance is modeled and optimized to match the manufacturer's RF resistance curves on the data sheets. A survey of RF variable attenuator designs and technologies is presented with special attention to currently available range, bandwidth, and insertion loss characteristics. The thesis applies APLACTM software as a computer aided design tool in implementing PIN diode attenuator circuits by writing circuit files for the RF network. Simulation results of the designed attenuator networks are presented graphically. The thesis demonstrates that considerable improvement in attenuator accuracy can be achieved by providing individual diode resistance control and by changing the bias current over frequency to cancel the effect of parasitics and thus provide frequency independent attenuation.
Subject : Applied sciences
: Electrical engineering
: Electrical engineering
: Electromagnetism
: Pure sciences
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304356557_26758.pdf
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