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" High Performance Metal Oxide Thin Film Transistors via Cluster Control and Interface Engineering "
Wang, Zhengxu
Yang, Yang
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Latin Dissertation
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| Language of Document
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English
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| Record Number
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1114542
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| Doc. No
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TLpq2408868011
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| Main Entry
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Wang, Zhengxu
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Yang, Yang
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| Title & Author
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High Performance Metal Oxide Thin Film Transistors via Cluster Control and Interface Engineering\ Wang, ZhengxuYang, Yang
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| College
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University of California, Los Angeles
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| Date
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2020
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| student score
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2020
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| Degree
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Ph.D.
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| Page No
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117
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| Abstract
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Around 100 years has passed since the first cathode ray tube has been fabricated. Fast and free transition of graphs provided much convenience for human communication. Generations of display were developed and flat panel display (FPD) techniques are developing tremendously recently. Various demands are raised including high definition, large area, flexibility, etc. Backplane need improving to meet these, especially the thin film transistor (TFT) units. High mobility, easy process and good interfaces are desired. Solution processed amorphous InGaZnO proves a competitive candidate for TFT semiconductor materials. Its electronic performance, uniformity and switching properties turned out among the best. However, problems remain to be solved including mechanism interpretation, precursor control, morphology and interface. Chapter 1 will introduce the history and state of art of TFT in more details.
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Cluster control
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IGZO
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Interface engineering
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Materials science
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Solution process
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TFT
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