Laser crystallization of gallium arsenide thin films

منو

" Laser crystallization of gallium arsenide thin films "
Muhammad Daniel Saeed Pirzada G. J. Cheng

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	53831
Doc. No	:	TL23785
Call number	:	‭3227453‬
Main Entry	:	Muhammad Daniel Saeed Pirzada
Title & Author	:	Laser crystallization of gallium arsenide thin films\ Muhammad Daniel Saeed Pirzada
College	:	Washington State University
Date	:	2006
Degree	:	Ph.D.
student score	:	2006
Page No	:	156
Abstract	:	Experimental investigations of phase transformation scenarios and the resulting microstructures and texture of crystallization of amorphous GaAs films on SiO2 induced by excimer laser are presented. The variation of grain size as a function of the incident energy density reveals three crystallization regimes: (i) the partial-melting regime; (ii) the complete melting regime; and (iii) the near-complete melting regime, which produces large-grained polycrystalline film. The effects of laser-energy density and film thickness on the texture evolution during laser irradiation of the film by single and multiple pulses are also investigated. Increased laser energy density was found to strengthen structure. Grain growth appears to be driven by strain energy. Theoretical investigation of micro-scale heat transfer and explosive crystallization in GaAs thin films are also submitted.
Subject	:	Applied sciences; Gallium arsenide; Laser crystallization; Thin films; Mechanical engineering; Materials science; 0548:Mechanical engineering; 0794:Materials science
Added Entry	:	G. J. Cheng
Added Entry	:	Washington State University