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" Plasma Charging Damage "
by Kin P. Cheung.
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BL
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| Record Number
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573200
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b402419
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| Main Entry
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Cheung, Kin P.
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| Title & Author
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Plasma Charging Damage\ by Kin P. Cheung.
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| Publication Statement
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London :: Springer London :: Imprint: Springer,, 2001.
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| ISBN
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9781447102472
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: 9781447110620
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| Contents
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1. Thin Gate-oxide Wear-out and Breakdown -- 2. Mechanism of Plasma Charging Damage I -- 3. Mechanism of Plasma Charging Damage II -- 4. Mechanism of Plasma Charging Damage III -- 5. Charging Damage Measurement I - Determination of Plasma's Ability to Cause Damage -- 6. Charging Damage Measurement II - Direct Measurement of Damage -- 7. Coping with Plasma Charging Damage.
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| Abstract
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This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place. Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: - plasma and mechanisms of plasma damage; - wear-out and breakdown of thin gate-oxides; - the impact of processing equipment on damage; - methods of damage measurement; - damage management; - gate-oxide scaling.
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Engineering.
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Machinery.
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Electronics.
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Optical materials.
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Surfaces (Physics).
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SpringerLink (Online service)
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