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" Analysis and Simulation of Heterostructure Devices "


Document Type : BL
Record Number : 578753
Doc. No : b407972
Main Entry : Palankovski, Vassil.
Title & Author : Analysis and Simulation of Heterostructure Devices\ by Vassil Palankovski, Rüdiger Quay.
Publication Statement : Vienna :: Springer Vienna :: Imprint: Springer,, 2004.
Series Statement : Computational Microelectronics,
ISBN : 9783709105603
: : 9783709171936
Abstract : The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Subject : Engineering.
Subject : Computer simulation.
Subject : Microwaves.
Subject : Electronics.
Subject : Optical materials.
Subject : Surfaces (Physics).
Added Entry : Quay, Rüdiger.
Added Entry : SpringerLink (Online service)
copyhttps://lib.clisel.com/site/catalogue/578753
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