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" Hierarchical Device Simulation "
by Christoph Jungemann, Bernd Meinerzhagen.
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BL
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578756
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b407975
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| Main Entry
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Jungemann, Christoph.
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| Title & Author
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Hierarchical Device Simulation : The Monte-Carlo Perspective /\ by Christoph Jungemann, Bernd Meinerzhagen.
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| Publication Statement
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Vienna :: Springer Vienna :: Imprint: Springer,, 2003.
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| Series Statement
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Computational Microelectronics,
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| ISBN
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9783709160862
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: 9783709172261
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| Contents
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Introduction -- Semiclassical Transport Theory -- The Monte-Carlo Method -- Scattering Mechanisms -- Full-Band Structure -- Device Simulation -- Momentum-Based Transport Models -- Stochastic Properties of Monte-Carlo Device Simulations -- Results -- Subject Index.
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| Abstract
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This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.
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Engineering.
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Electronics.
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Optical materials.
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Meinerzhagen, Bernd.
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SpringerLink (Online service)
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