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" MOCVD growth of GaN-based high electron mobility transistor structures / "


Document Type : BL
Record Number : 579282
Doc. No : b408501
Main Entry : Chen, Jr-Tai
Title & Author : MOCVD growth of GaN-based high electron mobility transistor structures /\ Jr-Tai Chen.
Series Statement : Linköping Studies in Science and Technology Dissertations,; Number 1662
Page. NO : 1 online resource (81 pages) :: illustrations (some color)
ISBN : 9789175190730
Bibliographies/Indexes : Includes bibliographical references.
Subject : Semiconductors-- Materials.
Subject : Epitaxy.
Added Entry : ProQuest (Firm)
: Semiconductor Materials Division., Department of Physics, Chemistry, and Biology., Linköping University,issuing body.
copyhttps://lib.clisel.com/site/catalogue/579282
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