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BL
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| Record Number
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640727
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dltt
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| Main Entry
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Ibe, Eishi H.
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| Title & Author
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Terrestrial radiation effects in ULSI devices and electronic systems /\ Eishi H. Ibe
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| Page. NO
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1 online resource
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| ISBN
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9781118479315
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: 1118479319
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: 9781118479322
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: 1118479327
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: 9781118479308
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: 1118479300
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: 1118479297
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: 9781118479292
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9781118479292
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| Bibliographies/Indexes
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Includes bibliographical references and index
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| Contents
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Introduction -- Basic Knowledge on Terrestrial Secondary Particles -- CMOS Semiconductor Devices and Systems -- Two Major Fault Modes: Charge Collection and Bipolar Action -- Four Hierarchies in Faulty Conditions in Electronic Systems: Fault-Error-Hazard-Failure -- Historical Background of Soft-Error Research -- General Scope of This Book -- References -- Terrestrial Radiation Fields -- General Sources of Radiation -- Backgrounds for Selection of Terrestrial High-Energy Particles -- Spectra at the Avionics Altitude -- Radioisotopes in the Field -- Summary of Chapter 2 -- References -- Fundamentals of Radiation Effects -- General Description of Radiation Effects -- Definition of Cross Section -- Radiation Effects by Photons (Gamma-ray and X-ray) -- Radiation Effects by Electrons (Beta-ray) -- Radiation Effects by Muons -- Radiation Effects by Protons -- Radiation Effects by Alpha-Particles -- Radiation Effects by Low-Energy Neutrons -- Radiation Effects by High-Energy Neutrons -- Radiation Effects by Heavy Ions -- Summary of Chapter 3 -- References -- Fundamentals of Electronic Devices and Systems -- Fundamentals of Electronic Components -- DRAM (Dynamic Random Access Memory) -- CMOS Inverter -- SRAM (Static Random Access Memory) -- Floating Gate Memory (Flash Memory) -- Sequential Logic Devices -- Combinational Logic Devices -- Fundamentals of Electronic Systems -- FPGA (Field Programmable Gate Array) -- Processor -- Summary of Chapter 4 -- References -- Irradiation Test Methods for Single Event Effects -- Field Test -- Alpha Ray SEE Test -- Heavy Ion Particle Irradiation Test -- Proton Beam Test -- Muon Test Method -- Thermal/Cold Neutron Test Methods -- High-Energy Neutron Test -- Medium-Energy Neutron Source by Using Radioisotopes -- Monoenergetic Neutron Test -- Quasi-Monoenergetic Neutron Test -- Spallation Neutron Test -- Attenuation of Neutron Flux and Energy -- Testing Conditions and Matters That Require Attention -- Memories -- Circuits -- Summary of Chapter 5 -- References -- Integrated Device Level Simulation Techniques -- Overall Multi-scale and Multi-physics Soft-Error Analysis System -- Relativistic Binary Collision and Nuclear Reaction Models -- Energy Bin Setting for a Particle Energy Spectrum -- Relativistic Binary Collision Model -- ALS (Absolute Laboratory System) and ALLS (Aligned Laboratory System) -- Intra-nuclear Cascade (INC) Model for High-Energy Neutrons and Protons -- Penetration of a Nucleon into a Target Nucleus -- Calculation of Probability of Binary Callision between Two Nucleons in the Target Nucleus -- Determination of Condition in Nucleon-Nucleon Collision -- Evaporation Model for High-Energy Neutrons and Protons -- Generalised Evaporation Model (GEM) for Inverse Reaction Cross Sections -- Neutron Capture Reaction Model -- Automated Device Modelling -- Setting of Random Position of Spallation Reaction Point in a Component -- Algorithms for Ion Tracking -- Fault Mode Models -- Calculation of Cross Section -- Prediction for Scaling Effects of Soft Error Down to 22 nm Design Rule in SRAMs -- Evaluation of Effects of Heavy Elements in Semiconductor Devices by Nuclear Spallation Reaction -- Upper Bound Fault Simulation Model -- Upper Bound Fault Simulation Results -- Electrons -- Muons -- Direct Ionisation by Proton -- Proton Spallation -- Low-Energy Neutron -- High-Energy Neutron Spallation -- Comparison of Secondary Cosmic Rays -- Upper Bound Simulation Method for SOC (System On Chip) -- Summary of Chapter 6 -- References -- Prediction, Detection and Classification Techniques of Faults, Errors and Failures -- Overview of Failures in the Field -- Prediction and Estimation of Faulty Conditions due to SEE -- Substrate/Well/Device Level -- Circuit Level -- Chip/Processor Level -- Board Level -- Operating System Level -- Application Level -- In-situ Detection of Faulty Conditions due to SEE -- Substrate/Well Level -- Device Level -- Circuit Level -- Chip/Processor Level -- Board/OS/Application Level -- Classification of Faulty Conditions -- Classification of Faults -- Classification of Errors in Time Domain -- MCU Classification Techniques of Memories in Topological Space Domain -- Classification of Errors in Sequential Logic Devices -- Classification of Failures: Chip/Board Level Partial/Full Irradiation Test -- Faulty Modes in Each Hierarchy -- Fault Modes -- Error Modes -- Failure Modes -- Summary of Chapter 7 -- References -- Mitigation Techniques of Failures in Electronic Components and Systems -- Conventional Stack-layer Based Mitigation Techniques, Their Limitations and Improvements -- Substrate/Device Level -- Circuit/Chip/Processor Layer -- Multi-core Processor -- Board/OS/Application Level -- Real-Time Systems: Automotives and Avionics -- Limitations and Improvements -- Challenges for Hyper Mitigation Techniques -- Co-operations of Hardware and Software -- Mitigation of Failures under Variations in SEE Responses -- Cross-Layer Reliability (CLR)/Inter-Layer Built-In Reliability (LABIR) -- Symptom-Driven System Resilient Techniques -- Comparison of Mitigation Strategies for System Failure -- Challenges in the Near Future -- Summary of Chapter 8 -- References -- Summary -- Summaru of Terrestrial Radiation Effects on ULSI Devices and Electronic Systems -- Directions and Challenges in the Future
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| Subject
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Electronic circuits-- Effect of radiation on.
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Integrated circuits-- Ultra large scale integration-- Reliability.
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Integrated circuits-- Effect of radiation on.
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| Dewey Classification
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621.3815
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| LC Classification
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TK7870.285
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| Added Entry
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Ohio Library and Information Network.
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