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BL
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641462
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dltt
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| Main Entry
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Sharon, Maheshwar
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| Title & Author
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An introduction to the physics and electrochemistry of semiconductors : : fundamentals and applications /\ Maheshwar Sharon.
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| Page. NO
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1 online resource
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| ISBN
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9781119274360
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: 1119274362
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: 9781119274346
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: 1119274346
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: 9781119274353 (electronic bk.)
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: 1119274354 (electronic bk.)
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9781119274339 (cloth)
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1119274338 (cloth)
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| Contents
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Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound
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2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor
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2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction
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3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface
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3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type
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| Subject
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Semiconductors-- Electric properties.
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| Subject
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Semiconductors-- Materials.
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| Dewey Classification
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537.6/22
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| LC Classification
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TK7871.85
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| Added Entry
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Ohio Library and Information Network.
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