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" Nanowire field effect transistors "
Dae Mann Kim, Yoon-Ha Jeong, editors
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BL
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| Record Number
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667415
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dltt
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| Title & Author
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Nanowire field effect transistors : principles and applications /\ Dae Mann Kim, Yoon-Ha Jeong, editors
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| Publication Statement
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New York :: Springer,, 2014
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| Page. NO
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1 online resource (292 pages)
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| ISBN
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1306163633
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: 1461481236
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: 1461481244
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: 9781306163637
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: 9781461481232
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: 9781461481249
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9781461481232
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| Bibliographies/Indexes
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Includes bibliographical references
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| Contents
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Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design : An Overview
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| Abstract
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Nanowire Field Effect Transistor: Basic Principles and Applications places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOS
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Field-effect transistors
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Nanostructured materials
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| LC Classification
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TA418.9.N35
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Jeong, Yoon-Ha
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Kim, Dae Mann
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Ohio Library and Information Network
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