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" Ferroelectric thin films : "
Masanori Okuyama, Yoshihiro Ishibashi (eds.).
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BL
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| Record Number
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719526
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b539218
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| Main Entry
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Masanori Okuyama, Yoshihiro Ishibashi (eds.).
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| Title & Author
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Ferroelectric thin films : : basic properties and device physics for memory applications\ Masanori Okuyama, Yoshihiro Ishibashi (eds.).
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| Publication Statement
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Berlin ; New York: Springer, ©2005.
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| Series Statement
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Topics in applied physics (En ligne), v. 98.
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(xiii, 244 p.) : illustrations, fichiers PDF
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| ISBN
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3540314792
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: 9783540314790
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| Notes
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Titre de l'écran-titre (visionné le 5 janvier 2009).
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| Contents
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Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.
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Couches minces.
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Ferroélectricité
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| Added Entry
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Masanori Okuyama
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Yoshihiro Ishibashi
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