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" Progress in SOI structures and devices operating at extreme conditions "
ed. by F. Balestra, A. Nazarov and V.S. Lysenko.
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BL
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721298
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b541004
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| Main Entry
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ed. by F. Balestra, A. Nazarov and V.S. Lysenko.
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| Title & Author
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Progress in SOI structures and devices operating at extreme conditions\ ed. by F. Balestra, A. Nazarov and V.S. Lysenko.
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| Publication Statement
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Dordrecht: Kluwer Academic Publishers, cop., 2002
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| Series Statement
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NATO science series., Series II,, Mathematics, physics and chemistry ;, vol. 58.
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IX, 351 p. : ill. ; 25 cm.
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140200575X
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: 1402005768
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: 9781402005756
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: 9781402005763
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| Notes
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Publ. in cooperation with NATO Scientific Affairs Division. - Proceedings of the NATO advanced research workshop on progress in SOI structures and devices operating at extreme conditions, Kyiv, Ukraine, 15-20 October 2000.
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| Contents
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Preface. Innovation in material technologies. Perspectives of SIMOX technology; M.J. Anc. MBE growth of the top layer in Si/YSZ/Si structure; V.G. Beshenkov, et al. SiCOI structures, Technology and characterization; C. Serre, et al. New SiC on insulator wafers based on the Smart-Cut (R) approach and their potential applications; J.P. Joly, et al. ELTRAN (R) (SOI-Epi Wafer (R)) Technology; T. Yonehara, K. Sakaguchi. Low dimension properties of nanostructures on ultra thin layers of silicon formed by oxidation of ion cut SOI wafers and electron lithography; V.P. Popov, et al. Reliability of SOI devices operating at harsh conditions. SOI for Harsh Environment Applications in the USA; C.A. Colinge. Performance and reliability of deep submicron SOI MOSFETs in a wide temperature range; F. Balestra. Strategies for high-temperature electronics: a Western European Perspective; C. Johnston, A. Crossley. Charge carrier injection and trapping in the buried oxides of SOI structures; A.N. Nazarov, et al. Cryogenic investigations of SIMOX buried oxide parameters; V.S. Lysenko, et al. Gate-All Around Technology for Harsh Environment Applications; J.P. Colinge. Low-Noise High-Temperature SOI Analog Circuits; V. Dessard, et al. Influence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films; C. Claeys, et al. Radiation effects in SOI magnetic sensitive elements under different radiation conditions; A.D. Mokrushin, et al. Characterization of advanced SOI materials and devices. Similarity relation for I-V characteristics of FETs with different channel shape; V.N. Dobrovolsky, et al. Laser-recrystallized SOI layers for sensor applications at cryogenic temperatures; A. Druzhinin,et al. Characterization and modeling of advanced SOI materials and devices; F. Allibert, et al. Modeling and measurements of generation and recombination currents in thin-film SOI gated-diodes; T.E. Rudenko, V.I. Kilchytska. Defect creation mechanisms due to hot-carriers in 0.15 mu/m SIMOX MOSFETs; P. Dimitrakis, et al. Defects and their electronic properties in high-pressure-annealed SOI structure sliced by hydrogen; V.P. Popov, et al. DC and AC models of partially-depleted SOI MOSFETs in weak inversion; D. Tomaszewski, et al. Perspectives of SOI structures and devices. On scaling the thin film Si thickness of SOI substrates. A perspective on Wafer Bonding for Thin Film Devices; K.D. Hobart, et al. Oxidized porous silicon based SOI: untapped resources; V. Bondarenko, et al. Electron-hole pair reversed drift in SOI structure; V.N. Dobrovolksy, et al. A novel depleted semi-insulating silicon material for high frequency applications; M. Johansson, S. Bengtsson. Self-organizing growth of silicon dot- and wire-like microcrystals on isolated substrates; A.I. Klimovskaya, et al. Author Index.
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| Subject
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Extreme environments -- Congresses.
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Semiconductors.
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Silicon-on-insulator technology -- Congresses.
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A Nazarov
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F Balestra
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