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" Semiconductor materials for optoelectronic and LTMBE materials : "
ed. by: J.P. Hirtz ...
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BL
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740404
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b560342
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ed. by: J.P. Hirtz ...
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Semiconductor materials for optoelectronic and LTMBE materials : : proceedings of Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics and Symposium B on Low Temperature Molecular Beam Epitaxial III - V Materials ... of the 1993 E-MRS spring conference, Strasbourg, France, May 4-7, 1993\ ed. by: J.P. Hirtz ...
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| Publication Statement
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Amsterdam <<>>: North-Holland, 1993
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Symposia proceedings.; European Materials Research Society
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XIV, 345 Seiten : Illustrationen, Diagramme.
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0444817697
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: 9780444817693
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| Contents
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Part 1 Symposium A on semiconductor materials for optoelectronic devices, OEICs and photonics: epitaxy for optoelectronic applications; quantum size structures; optoelectronic devices; strained and mismatched structures; interdiffusion and ion implantation; new devices and integration of devices; optoelectronics on silicon; bulk III-V crystals and new optoelectronic materials. Part 2 Symposium B on low temperature molecular beam epitaxial III-V materials - physics and applications: LTMBE GaAs - present status and perspectives, G.L. Witt; point defects in III-V materials grown by molecular beam epitaxy at low temperature, P. Hautojarvi et al; GaAs, AlGaAs and InGaAs epilayers containing As clusters - semimetal/semiconductor composites, M.R. Melloch et al; extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP, A. Claverie and Z. Liliental-Weber; optoelectronic applications of LTMBE III-V materials at a low temperature by molecular beam epitaxy, U.K. Mishra.
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| LC Classification
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TA1750.E339 1993
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J P Hirtz
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