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" Silicon carbide. Volume 1, Growth, defects, and novel applications "
edited by Peter Friedrichs [and others].
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BL
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| Record Number
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743771
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b563719
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| Main Entry
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edited by Peter Friedrichs [and others].
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| Title & Author
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Silicon carbide. Volume 1, Growth, defects, and novel applications\ edited by Peter Friedrichs [and others].
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| Publication Statement
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Weinheim : Wiley-VCH Verlag, ©2010.
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| Page. NO
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(xxii, 506 pages)
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| ISBN
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352740953X
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: 352762905X
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: 3527629068
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: 9783527409532
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: 9783527629053
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: 9783527629060
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| Contents
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Growth of SiC. Bulk Growth of SiC --; Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution / Sakwe Aloysius Sakwe, Mathias Stockmeier, Philip Hens, Ralf Muller, Desiree Queren, Ulrike Kunecke, Katja Konias, Rainer Hock, Andreas Magerl, Michel Pons, Albrecht Winnacker, Peter Wellmann --; Bulk and Epitaxial Growth of Micropipe-Free Silicon Carbide on Basal and Rhombohedral Plane Seeds / Boris M Epelbaum, Octavian Filip, Albrecht Winnacker --; Formation of Extended Defects in 4H-SiC Epitaxial Growth and Development of a Fast Growth Technique / Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano --; Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects / Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta --; Characterization of Defects and Material Properties. Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches / Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov, John W Steeds --; EPR Identification of Intrinsic Defects in SiC / J Isoya, T Umeda, N Mizuochi, N T Son, E Janzen, T Ohshima --; Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide / Martin Rambach, Anton J Bauer, Heiner Ryssel --; Optical Properties of As-Grown and Process-Induced Stacking Faults in 4H-SiC / Jean Camassel, Sandrine Juillaguet --; Characterization of Defects in Silicon Carbide by Raman Spectroscopy / Martin Hundhausen, Roland Pusche, Jonas R̲hrl, Lothar Ley --; Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation / Tsunenobu Kimoto, Katsunori Danno, Jun Suda --; Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n 4H-SiC Epitaxial Layers / Paul B Klein --; Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization / Christophe Raynaud, Duy-Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, Mihai Lazar, Dominique Planson --; Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation / Tetsuo Hatakeyama --; Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors / M Krieger, S Beljakowa, L Trapaidze, T Frank, H B Weber, G Pensl, N Hatta, M Abe, H Nagasawa, A Schoner --; Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems / Ulrich Starke --; Novel Applications. Comparative Columnar Porous Etching Studies on n-Type 6H SiC Crystalline Faces / Y Ke, R P Devaty, W J Choyke --; Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS / Christian A Zorman, Rocco J Parro --; Epitaxial Graphene: A New Material / Th Seyller, A Bostwick, K V Emtsev, K Horn, L Ley, J L McChesney, T Ohta, J D Riley, E Rotenberg, F Speck --; Density Functional Study of Graphene Overlayers on SiC / Oleg Pankratov, Alexander Mattausch.
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| Subject
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Halvledare.
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| Subject
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Silicon carbide.
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| LC Classification
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TK7871.15.S56E358 2010
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| Added Entry
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Peter Friedrichs
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