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" Insulating Films on Semiconductors : "
edited by Max J. Schulz, Gerhard Pensl.
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BL
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752703
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b572662
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| Main Entry
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edited by Max J. Schulz, Gerhard Pensl.
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| Title & Author
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Insulating Films on Semiconductors : : Proceedings of the Second International Conference, INFOS 81, Erlangen, Fed. Rep. of Germany, April 27-29, 1981\ edited by Max J. Schulz, Gerhard Pensl.
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| Publication Statement
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Berlin, Heidelberg : Springer Berlin Heidelberg, 1981
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| Series Statement
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Springer series in electrophysics, 7.
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| ISBN
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3642682472
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: 3642682499
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: 9783642682476
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: 9783642682490
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| Contents
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I Si-SiO2 Interface --; Electronic Structure of the Si-SiO2 Interface --; Morphology of the Si-SiO2 Interface --; Influence of Oxidation Parameters on Atomic Roughness at the Si-SiO2 Interface --; Electronic and Optical Properties of SiOX --; Hydrogenation of Defects at the Si-SiO2 Interface --; Stress Behaviour of Hydrogen Annealed Interface States --; On the Si/SiO2 Interface Recombination Velocity --; Optical Excitation of MOS-Interface-States --; II Thin Insulating Films --; Langmuir-Blodgett Films on Semiconductors --; A Study of MIS Structures Prepared Under U1tra-High-Vacuum Conditions --; Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma Anodization --; Influence of Different Technologies of Metal Deposition and of Oxide Growth on the Electronic Properties of MIS Tunnel Diodes --; Photoelectric Methods as a Tool for the Analysis of Current Flow Mechanism in MIS Tunnel Diodes --; III Charge Injection Into Insulators --; Charge Injection Into Wide Energy Band-Gap Insulators --; Oxide and Interface Charge Generation by Electron Injection in MOS Devices --; Trapping Characteristics in SiO2 --; Interface Effects in Avalanche Injection of Electrons into Silicon Dioxide --; Interface State and Charge Generation by Electron Tunneling into Thin Layers of SiO2 --; Modelling of Flat-Band Voltage Shift During Avalanche Injection on MOS Capacitors --; Influence of Electron-Phonon Scattering on Photoinjection Into SiO2 --; IV Multilayer Structures --; Charge Loss in MANOS Memory Structures --; Surface-State Density Evaluation Problems in MNOS Structures --; Dye-Sensitized Photodischarge of Metal-Dye-Oxide-Silicon (MDOS) and Metal-Dye-Nitride-Oxide-Silicon (MDNOS) Capacitors --; V Interface Characterization Techniques --; EPR on MOS Interface States --; The Non-Equilibrium Linear Voltage Ramp Technique as a Diagnostic Tool for the MOS Structure --; MOS Characterization by Phase Shift Impedance Technique --; Si/SiO2 Properties Investigated by the CC-DLTS Method --; Study of Ellipsometry: The Computation of Ellipsometric Parameters in a Nonuniform Film on Solid Substrate --; VI Breakdown and Instability of the SiO2-Si System --; Breakdown and Wearout Phenomena in SiO2 --; Hydrogen-Sodium Interactions in Pd-MOS Devices --; Electrical Behaviour of Hydrogen Ions in SiO2 Films on Silicon --; Chlorine Implantation in Thermal SiO2 --; VII Technology --; Deposition Technology of Insulating Films --; Very High Charge Densities in Silicon Nitride Films on Silicon for Inversion Layer Solar Cells --; Silicon Nitride Layers Grown by Plasma Enhanced Thermal Nitridation --; Buried Oxide Layers Formed by Oxygen Implantation for Potential Use in Dielectrically Isolated ICs --; VIII Laser Processing --; Properties of Patterned and CW Laser-Crystallized Silicon Films on Amorphous Substrates --; SiO2 Interface Degradation and Minority Carrier Lifetime Effects of Laser Beam Processing --; Laser-Induced Crystallization in Ge Films and Multilayered Al-Sb Films --; IX Transport Properties in Inversion Layers --; Subband Physics with Real Interfaces --; Transport Properties of Carriers at Oxide-Hg1?xCdx Te Interface --; Role of Interface States in Electron Scattering at Low Temperatures --; Neutral Scattering Centers Near the Si/SiO2-Interface of MOSFET Devices Prepared by TCE Oxidation --; X Films on Compound Semiconductors --; Native Oxide Reactions on III-V Compound Semiconductors --; MISFET and MIS Diode Behaviour of Some Insulator-InP Systems --; Plasma Anodised Alumina Films in GaAs and InP MIS Structures --; Composition Changes During Oxidation of AIIIBV Surfaces --; RF-Sputtering of Silicon Nitride Layers on GaAs Substrates: Characterization of an Intermediate Layer Between the Substrate and the Deposited Film --; Surface Analytical and Capacitance-Voltage Characterization of Anodic Oxide Films on Hg0.8Cd0.2Te --; Surface and In-Depth Analysis of Anodic Oxide-Layers on Cd0.2Hg0.8Te --; Impact of Insulator Charge Trapping on I.R.C.I.D. Transfer Efficiency --; Index of Contributors.
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| Abstract
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The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the properties of semiconductors deposited and laser processed on insulating films was in cluded for the first time.
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| Subject
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Surfaces (Physics)
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| LC Classification
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TK7871.99.M4E358 1981
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| Added Entry
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G Pensl
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M Schulz
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