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" Ion Implantation: "
edited by Heiner Ryssel, Hans Glawischnig.
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BL
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752835
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b572794
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| Main Entry
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edited by Heiner Ryssel, Hans Glawischnig.
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| Title & Author
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Ion Implantation: : Equipment and Techniques : Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13-17, 1982\ edited by Heiner Ryssel, Hans Glawischnig.
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| Publication Statement
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Berlin, Heidelberg : Springer Berlin Heidelberg, 1983
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| Series Statement
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Springer series in electrophysics, 11.
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| ISBN
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3642691560
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: 3642691587
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: 9783642691560
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: 9783642691584
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| Contents
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I Ion Implanters --; Physical Limitations of Ion Implantation Equipment (With 16 Figures) --; A New Ion Implanter for Solar-Cell Fabrication (With 7 Figures) --; SURIM --; A Westinghouse Surface Implantation Machine (With 8 Figures) --; A New Research Implanter at the University of Surrey (With 4 Figures) --; Radio Frequency Ion Accelerator (With 6 Figures) --; II Ion Sources --; Performance of the Bethge-Baumann Ion Source with Radio Frequency Operation (With 1 Figures) --; Emittance Measurements on an Indirectly Heated Heavy-Ion Source (With 3 Figures) --; A High-Brightness Duoplasmatron Ion Source (With 2 Figures) --; Optimization of a Single-Aperture Extraction System for High-Current Ion Sources (With 9 Figures) --; Development of a High-Current Ion Source for Non-Volatile Elements (With 5 Figures) --; The Use of Computers for Designing and Testing Ion Beam Systems (With 23 Figures) --; Multipole Ion Source for Ion Implantation and Isotope Separation (With 5 Figures) --; An Ion Source for Semiconductor Implantation (With 7 Figures) --; III Implanter Subsystems --; High Throughput Wafer Handling System for Serial Process Ion Implantation (With 13 Figures) --; Comparison of Beam Scanning Systems (With 16 Figures) --; A Low-Internal-Resistance and High-Precision High-Voltage Power Supply (With 5 Figures) --; Electrostatic Switch Used for 600 kV Ion Implanter (With 6 Figures) --; Automatic Wafer Handling for a Mechanically Scanned Ion Implanter (With 3 Figures) --; On-Line Control of Production Ion Implanters Using Standard Desk Computers (With 3 Figures) --; A Forty-Channel Optical-Fiber Telecommunication System for Manipulation of High-Voltage Terminals in Ion Implanters (With 3 Figures) --; Low-Cost Analog Signal Fiber Link with 300 kV Isolation (With 3 Figures) --; Improvements in the Vacuum System of a VDG Accelerator Used for Clean Ion Implantation (With 3 Figures) --; IV Special Implantation Techniques --; High Temperature Implantation of Powders Using a Horizontal Ion Beam (With 2 Figures) --; A Technique for Implanting Dopant Distributions in Solids (With 5 Figures) --; Wafer Cooling and Photoresist Masking Problems in Ion Implantation (With 18 Figures) --; Electron-Beam-Induced Recoil Implantation in Semiconductors at 300 K (With 10 Figures) --; Wafer Cooling in Ion Implantation (With 8 Figures) --; A Rotating Attenuator for Concentration Profiling of Implanted Helium Ions (With 6 Figures) --; V Ion Beam Lithography --; Ion-Beam Lithography (With 11 Figures) --; Development Characteristics of Ga+ Exposed PMMA and Associated Lithographic Resolution Limits (With 5 Figures) --; Simulation of the Lithographic Properties of Ion-Beam Resists (With 6 Figures) --; Deposition of Masking Films by Ion-Beam Induced Polymerization (With 4 Figures) --; VI Measuring Techniques --; Dosimetry and Beam Quality (With 21 Figures) --; A New Facility for Ion Beam Surface Analysis (With 6 Figures) --; Non-Destructive Techniques for Measuring the Parameters of Low-Energy Continuous Ion Beams (With 5 Figures) --; Investigation of the Lifetime of Photocurrent Carriers in Si During Ion Implantation (With 5 Figures) --; A Mössbauer Spectrometer for in situ Low Temperature Studies of Ion-Bombarded Metals (With 4 Figures) --; Background in (n, p) and (n,?) Spectrometry (With 6 Figures) --; Monitoring of X-Y-Scan Quality by Amorphization Contrast on Silicon Wafers (With 4 Figures) --; VII Implantation into Metals --; Techniques and Equipment for Implantation into Metals (With 7 Figures) --; Nitriding of Steels: Conventional Processes and Ion Implantation (With 5 Figures) --; Effect of Ion Mixing on the Wear Behaviour of Silver (With 4 Figures) --; Methods to Control Target Heating During Ion Implantation (With 5 Figures) --; VIII Implantation into Semiconductors --; New Applications of Ion Implantation in Silicon Processing (With 14 Figures) --; Limitations of Ion Implantation in MOS Technology (With 13 Figures) --; Implant Processes for Bipolar Product Manufacturing and Their Effects on Device Yield (With 16 Figures) --; Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing (With 5 Figures) --; Combined Boron and Aluminum Implantation for High-Voltage Devices (With 4 Figures) --; Deep Implanted Layers of Boron in Silicon (With 5 Figures) --; Planar Channelling of Si Implants in GaAs (With 4 Figures) --; Application of High-Current Ion-Implantation Systems in Semiconductor Device Technology (With 6 Figures) --; Implantation Doping of Germanium with Be, Mg, Zn, and B Ions (With 7 Figures) --; Low Energy Implantation of Nitrogen and Ammonia into Silicon (With 12 Figures) --; Doping Behavior of Implanted Magnesium in Silicon (With 11 Figures) --; IX Transient Annealing --; Beam Annealing of Ion-Implanted Silicon (With 16 Figures) --; Radiation Annealing of Silicon-Implanted GaAs with a CW Xe Arc Lamp (With 7 Figures) --; Pulse-Laser-Induced Epitaxial Regrowth of Ion-Implanted Semiconductors (With 15 Figures) --; CO2 Laser Annealing of Ion-Implanted Silicon: Relaxation Characteristics of Metastable Concentrations (With 6 Figures) --; Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design (With 5 Figures) --; Investigation of Polysilicon Implantation Under Thermal and Laser Annealing (With 8 Figures) --; CW-CO2-Laser Alloying of Au-Ge-Ni Ohmic Contacts on GaAs (With 7 Figures) --; Photoluminescence of Ion-Implanted Gallium Arsenide After Laser Annealing (With 7 Figures) --; Channeling and High-Resolution Backscattering Studies of Laser-Annealed Low-Energy Arsenic-Implanted Silicon (With 8 Figures) --; Index of Contributors.
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| Abstract
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The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.
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Crystallography.
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Physics.
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| Added Entry
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Hans Glawischnig
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Heiner Ryssel
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