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" Optical Characterization of Epitaxial Semiconductor Layers "
edited by Günther Bauer, Wolfgang Richter.
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BL
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| Record Number
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754045
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b574007
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| Main Entry
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edited by Günther Bauer, Wolfgang Richter.
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| Title & Author
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Optical Characterization of Epitaxial Semiconductor Layers\ edited by Günther Bauer, Wolfgang Richter.
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| Publication Statement
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Berlin, Heidelberg : Springer Berlin Heidelberg, 1996
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| Page. NO
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(XVI, 429 pages)
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| ISBN
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3642796788
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: 9783642796784
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| Contents
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1 Introduction --; 2 Analysis of Epitaxial Growth --; 2.1 Vapour Phase Epitaxy: Basics --; 2.2 Gas Phase Diagnostics: Transport --; 2.3 Gas Phase Diagnostics: Reaction Kinetics --; 2.4 Surface Diagnostics --; 2.5 Conclusions --; 3 Spectroscopic Ellipsometry --; 3.1 Principle of Measurement --; 3.2 Experimental Details --; 3.3 Interpretation of the Effective Dielectric Function --; 3.4 Characteristic Experimental Examples --; 3.5 Sample Related Problems --; 3.6 Summary --; 4 Raman Spectroscopy --; 4.1 Theory of Raman Spectroscopy --; 4.2 Experimental Setup for Raman Scattering --; 4.3 Analysis of Lattice Dynamical Properties --; 4.4 Analysis of Electronic Properties --; 4.5 Band Bending at Interfaces --; 4.6 Summary --; 5 Far-Infrared Spectroscopy --; 5.1 Theoretical Foundations --; 5.2 Fourier Transform Spectroscopy --; 5.3 Determination of Layer Thicknesses --; 5.4 Determination of Carrier Concentrations --; 5.5 Confined Electron Systems --; 5.6 Determination of Impurity Concentrations --; 5.7 Shallow Donors and Acceptors --; 5.8 IR Characterisation of Porous Silicon Layers --; 5.9 Summary --; 6 High Resolution X-Ray Diffraction --; 6.1 Principal Scattering Geometries --; 6.2 Kinematical and Dynamical Theory --; 6.3 Thickness Dependence of Bragg Reflections --; 6.4 Strain Phenomena --; 6.5 Rocking-Curves from Heterostructures --; 6.6 Multilayer Structures --; 6.7 Scans in the Reciprocal Lattice --; 6.8 New Developments --; 6.9 Grazing-Incidence X-Ray Techniques --; 6.10 Reflection of X-Rays at Grazing Incidence --; 6.11 Specular and Non-Specular Scattering --; 6.12 Grazing-Incidence X-Ray Diffraction --; 6.13 Summary --; 6.14 Concluding Remarks --; References.
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| Abstract
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The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of semiconductor layers and for those entering this field. It summarizes the present-day knowledge and reviews the latest developments important for future ex-situ and in-situ studies.
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| Subject
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Optical materials.
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Semiconductors -- Optical properties.
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Surfaces (Physics)
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| LC Classification
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QC611.6.O6E358 1996
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| Added Entry
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Günther Bauer
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Wolfgang Richter
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