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" Hydrogen in Crystalline Semiconductors "
by Stephen J. Pearton, James W. Corbett, Michael Stavola.
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BL
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| Record Number
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754635
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b574597
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| Main Entry
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by Stephen J. Pearton, James W. Corbett, Michael Stavola.
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| Title & Author
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Hydrogen in Crystalline Semiconductors\ by Stephen J. Pearton, James W. Corbett, Michael Stavola.
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| Publication Statement
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Berlin, Heidelberg : Springer Berlin Heidelberg, 1992
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| Series Statement
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Springer series in materials science, 16.
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| Page. NO
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(xii, 363 pages 250 illustrations)
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| ISBN
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3540539239
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: 3642847781
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: 9783540539230
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: 9783642847783
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| Contents
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1. Introduction --; 2. Hydrogen Incorporation in Crystalline Semiconductors --; 2.1 Techniques for Hydrogen Incorporation in Semiconductors --; 2.2 Survey of the Configurations of Hydrogen in Semiconductors --; 3. Passivation of Deep Levels by Hydrogen --; 3.1 Deep-Level Passivation in Silicon --; 3.2 Passivation of Defects in Gallium Arsenide --; 3.3 Aluminum Gallium Arsenide --; 3.4 Gallium Phosphide --; 3.5 CdHgTe, Zn3P2 --; 3.6 Germanium --; 4. Shallow Impurity Passivation by Atomic Hydrogen --; 4.1 Silicon --; 4.2 Gallium Arsenide --; 4.3 AlGaAs --; 4.4 CdTe and ZnTe --; 4.5 Gallium Phosphide --; 4.6 Germanium --; 4.7 Indium Phosphide --; 4.8 BN and BP --; 4.9 Correlation with Muonium --; 5. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy --; 5.1 Vibrational Spectroscopy of H-Related Complexes --; 5.2 Uniaxial Stress Studies of H-Related Complexes --; 5.3 Hydrogen Motion in the B-H Complex --; 5.4 Conclusion --; 6. The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors --; 6.1 Acceptor-H Complexes --; 6.2 Donor-H Complexes --; 6.3 Unintentional Hydrogenation --; 6.4 Uniaxial Stress Studies --; 6.5 Cluster Calculations for H-Related Complexes in GaAs --; 6.6 Conclusion --; 7. Hydrogen, and Semiconductor Surfaces and Surface Layers --; 7.1 Etching of Silicon Surfaces by Hydrogen --; 7.2 Plasma Etching --; 7.3 Implantation of Protons --; 7.4 Hydrogen on Semiconductor Surfaces --; 8. Hydrogen-Related Defects in Semiconductors --; 8.1 Hydrogen-Related Defects in Silicon --; 8.2 Hydrogen-Related Defects in Germanium --; 8.3 Hydrogen-Related Defects in Compound Semiconductors --; 8.4 Hydrogen-Related IR Bands in Silicon --; 9. Diffusion of Hydrogen in Semiconductors --; 9.1 Diffusion of Hydrogen in Solids --; 9.2 Diffusion Equations --; 9.3 Analysis of Diffusion Profiles --; 9.4 Diffusion of Hydrogen in Silicon --; 9.5 Diffusion of Hydrogen in Germanium --; 9.6 Diffusion in Gallium Arsenide --; 9.7 Diffusion of Hydrogen in Other Materials --; 9.8 Summary --; 10. Resonance Studies Pertinent to Hydrogen in Semiconductors --; 10.1 Electron Paramagnetic Resonance --; 10.2 Related Muon Studies --; 10.3 Perturbed Angular Correlation --; 11. Prevalence of Hydrogen Incorporation and Device Applications --; 11.1 Experimental Studies of Hydrogen Incorporation --; 11.2 Hydrogen Sensing with MOS Structures --; 11.3 Hydrogen in III-V Semiconductors --; 12. Hydrogen and the Mechanical Properties of Semiconductors --; 12.1 Hydrogen Embrittlement --; 12.2 Hydrogen-Related Defects --; 12.3 m-V Semiconductors --; References.
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| Abstract
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Vgl. Hardcoverausgabe.
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| Subject
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Electronics.
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Physical organic chemistry.
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Physics.
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| LC Classification
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QC611.6.D4B978 1992
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| Added Entry
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James W Corbett
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Michael Stavola
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Stephen J Pearton
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