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" Crystal growth and evaluation of silicon for VLSI and ULSI "
Golla Eranna.
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BL
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754865
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b574827
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| Main Entry
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Golla Eranna.
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| Title & Author
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Crystal growth and evaluation of silicon for VLSI and ULSI\ Golla Eranna.
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| Edition Statement
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1st
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| Publication Statement
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Boca Raton : CRC Press, 2014
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: illustrations (black and white).
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| ISBN
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1482232820
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: 9781482232820
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<P>Preface</P><P>About the Author</P><B><P>Introduction</P></B><P>Silicon: The Semiconductor</P><P>Why Single Crystals</P><P>Revolution in Integrated Circuit Fabrication Technology and the Art of Device Miniaturization</P><P>Use of Silicon as a Semiconductor</P><P>Silicon Devices for Boolean Applications</P><P>Integration of Silicon Devices and the Art of Circuit Miniaturization</P><P>MOS and CMOS Devices for Digital Applications</P><P>LSI, VLSI, and ULSI Circuits and Applications</P><P>Silicon for MEMS Applications</P><P>Summary</P><P>References</P><B><P>Silicon: The Key Material for Integrated Circuit Fabrication Technology</P></B><P>Introduction</P><P>Preparation of Raw Silicon Material</P><P>Metallurgical-Grade Silicon</P><P>Purification of Metallurgical-Grade Silicon</P><P>Ultra-High Pure Silicon for Electronics Application</P><P>Polycrystalline Silicon Feed for Crystal Growth</P><P>Summary</P><P>References</P><B><P>Importance of Single Crystals for Integrated Circuit Fabrication</P></B><P>Introduction</P><P>Crystal Structures</P><I><P>Different Crystal Structures in Nature</P><P>Cubic Structures</P></I><P>Diamond Crystal Structure</P><I><P>Silicon Crystal Structure</P><P>Silicon Crystals and Atomic Packing Factors</P></I><P>Crystal Order and Perfection</P><P>Crystal Orientations and Planes</P><P>Influence of Dopants and Impurities in Silicon Crystals</P><P>Summary</P><P>References</P><B><P>Different Techniques for Growing Single-Crystal Silicon</P></B><P>Introduction</P><P>Bridgman Crystal Growth Technique</P><P>Czochralski Crystal Growth/Pulling Technique</P><I><P>Crucible Choice for Molten Silicon</P><P>Chamber Temperature Profile</P><P>Seed Selection for Crystal Pulling</P><P>Environmental and Ambient Control in the Crystal Chamber</P><P>Crystal Pull Rate and Seed/Crucible Rotation</P><P>Dopant Addition for Growing Doped Crystals</P><P>Methods for Continuous Czochralski Crystal Growth</P><P>Impurity Segregation between Liquid and Grown Silicon Crystals</P><P>Crystal Growth Striations</P><P>Use of a Magnetic Field in the Czochralski Growth Technique</P><P>Large-Area Silicon Crystals for VLSI and ULSI Applications</P><P>Post-Growth Thermal Gradient and Crystal Cooling after Pull-Out</P></I><P>Float-Zone Crystal Growth Technique</P><I><P>Seed Selection</P><P>Environment and Chamber Ambient Control</P><P>Heating Mechanisms and RF Coil Shape</P><P>Crystal Growth Rate and Seed Rotation</P><P>Dopant Distribution in Growing Crystals</P><P>Impurity Segregation between Liquid and Grown Silicon Crystals</P><P>Use of Magnetic Field for Float-Zone Growth</P><P>Large Area Silicon Crystals and Limitations of Shape and Size</P><P>Thermal Gradient and Post-Growth Crystal Cooling</P></I><P>Zone Refining of Single-Crystal Silicon</P><P>Other Silicon Crystalline Structures and Growth Techniques</P><I><P>Silicon Ribbons</P><P>Silicon Sheets</P><P>Silicon Whiskers and Fibers</P><P>Silicon in Circular and Spherical Shapes</P><P>Silicon Hollow Tubes</P><P>Casting of Polycrystalline Silicon for Photovoltaic Applications</P></I><P>Summary</P><P>References</P><B><P>From Silicon Ingots to Silicon Wafers</P></B><P>Introduction</P><P>Radial Resistivity Measurements</P><P>Boule Formation, Identification of Crystal Orientation, and Flats</P><P>Ingot Slicing</P><P>Mechanical Lapping of Wafer Slices</P><P>Edge Profiling of Slices</P><P>Chemical Etching and Mechanical Damage Removal</P><P>Chemimechanical Polishing for Planar Wafers</P><P>Surface Roughness and Overall Wafer Topography</P><P>Megasonic Cleaning</P><P>Final Cleaning and Inspection</P><P>Summary</P><P>References</P><B><P>Evaluation of Silicon Wafers</P></B><P>Introduction</P><P>Acoustic Laser Probing Technique</P><P>Atomic-Force Microscope Studies on Surfaces</P><P>Auger Electron Spectroscopic Studies</P><P>Chemical Staining and Etching Techniques</P><P>Contactless Characterization</P><P>Deep-Level Transient Spectroscopy</P><P>Defect Decoration by Metals</P><P>Electron Beam and High-Energy Electron Diffraction Studies</P><P>Flame Emission Spectrometry</P><P>Four-Point Probe Technique for Resistivity Measurement and Mapping</P><P>Fourier Transform Infrared Spectroscopy Measurements for Impurity Identification</P><P>Gas Fusion Analysis</P><P>Hall Mobility</P><P>Mass Spectra Analysis</P><P>Minority Carrier Diffusion Length/Lifetime/Surface Photovoltage</P><P>Optical Methods for Impurity Evaluation</P><P>Photoluminescence Method for Determining Impurity Concentrations</P><P>Gamma-Ray Diffractometry</P><P>Scanning Electron Microscopy for Defect Analysis</P><P>Scanning Optical Microscope</P><P>Secondary Ion Mass Spectrometer for Impurity Distribution</P><P>Spreading Resistance and Two-Point Probe Measurement Technique</P><P>Stress Measurements</P><P>Transmission Electron Microscopy</P><P>van der Pauw Resistivity Measurement Technique for Irregular-Shaped Wafers</P><P>X-Ray Technique for Crystal Perfection and Dislocation Density</P><P>Summary</P><P>References</P><B><P>Resistivity and Impurity Concentration Mapping of Silicon Wafers</P></B><P>Introduction</P><P>Electrically Active and Inactive Impurities</P><P>Surface Mapping and Concentration Contours</P><P>Surface Roughness Mapping on a Complete Wafer</P><P>Summary</P><P>References</P><B><P>Impurities in Silicon Wafers</P></B><P>Effect of Intentional and Unintentional Impurities and Their Influence on Silicon Devices </P><P>Intentional Dopant Impurities in Silicon Wafers</P><I><P>Aluminum</P><P>Antimony</P><P>Arsenic</P><P>Boron</P><P>Gallium</P><P>Phosphorus</P></I><P>Unintentional Dopant Impurities in Silicon Wafers</P><I><P>Carbon</P><P>Chromium</P><P>Copper</P><P>Germanium</P><P>Gold</P><P>Helium</P><P>Hydrogen</P><P>Iron</P><P>Nickel</P><P>Nitrogen</P><P>Oxygen</P><P>Tin</P></I><P>Other Metallic Impurities</P><P>Summary</P><P>References</P><B><P>Defects in Silicon Wafers</P></B><P>Introduction</P><P>Impact of Defects in Silicon Devices and Structures</P><P>Point Defects and Vacancies</P><P>Line Defects</P><P>Bulk Defects and Voids</P><P>Dislocations and Screw Dislocations</P><P>Swirl Defects</P><P>Stacking Faults</P><P>Precipitations</P><P>Surface Pits/Crystal-Originated Particles</P><P>Grown Vacancies and Defects</P><P>Thermal Donors</P><P>Slips, Cracks, and Shape Irregularities</P><P>Stress, Bowing, and Warpage</P><P>Summary</P><P>References</P><B><P>Silicon Wafer Preparation for VLSI and ULSI Processing</P></B><P>Introduction</P><P>Purity of Chemicals Used for Silicon Processing</P><P>Degreasing of Silicon Wafers</P><P>Removal of Metallic and Other Impurities</P><P>Gettering of Metallic Impurities</P><P>Denuding of Silicon Wafers</P><P>Neutron Irradiation</P><P>Argon Annealing of Wafers</P><P>Hydrogen Annealing of Wafers</P><P>Final Cleaning, Rinsing, and Wafer Drying</P><P>Summary</P><P>References</P><B><P>Packing of Silicon Wafers</P></B><P>Packing of Fully Processed Blank Silicon Wafers</P><P>Storage of Wafers and Control of Particulate Contamination</P><P>Storage of Wafers and Control of Particulate Contamination with Process-Bound Wafers</P><P>Summary</P><P>References</P><P>Index</P>
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| Subject
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Crystal growth.
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Silicon crystals -- Electric properties.
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Silicon crystals.
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| LC Classification
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QD921.G655 2014
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| Added Entry
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G Eranna
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