رکورد قبلیرکورد بعدی

" Semiconductor Device Reliability "


Document Type : BL
Record Number : 772886
Doc. No : b592880
Main Entry : edited by A. Christou, B.A. Unger.
Title & Author : Semiconductor Device Reliability\ edited by A. Christou, B.A. Unger.
Publication Statement : Dordrecht : Springer Netherlands, 1989
Series Statement : NATO ASI series., Series E,, Applied sciences ;, 175.
Page. NO : (592 pages)
ISBN : 9400924828
: : 9401076200
: : 9789400924826
: : 9789401076203
Contents : I. Reliability Testing.- 1.1 The Influence of Temperature and Use Conditions on the Degradation of LED Parameters.- 1.2 An Historical Perspective of GaAs MESFET Reliability Work at Plessey.- 1.3 Screening and Burn-In: Application to Optoelectronic Device Selection for High-Reliability S280 Optical Submarine Repeaters.- 1.4 Assuring the Reliability of Lasers Intended for the Uncontrolled Environment.- 1.5 Component Burn-In: The Changing Attitude.- II. Reliability Models and Failure Mechanisms.- 2.1 Statistical Models for Device Reliability; An Overview.- 2.2 Computer-Aided Analysis of Integrated Circuit Reliability.- 2.3 Reliability Assessment of CMOS ASIC Designs.- 2.4 Models Used in Undersea Fibre Optic Systems Reliability Prediction.- III. Failure Analysis.- 3.1. Failure Analysis: The Challenge.- 3.2 Gate Metallisation Systems for High Reliability GaAs MESFET Transistors.- 3.3 Reliability Limitations of Metal Electrodes on GaAs.- 3.4 Failure Mechanisms of GaAs MESFETs and Low-Noise HEMTs.- 3.5 Metal Contact Degradation on III-V Compound Semiconductors.- 3.6 Nuclear Methods in the Characterization of Semiconductor Reliability.- IV. Opto-Electronic Reliability (I).- 4.1 A Review of the Reliability of III-V Opto-electronic Components.- 4.2 Considerations on the Degradation of DFB Lasers.- 4.3 InP-Based 4 x 4 Optical Switch Package Qualification and Reliability.- 4.4 Modelling the Effects of Degradation on the Spectral Stability of Distributed Feedback Lasers.- V. Opto-Electronic Reliability (II).- 5.1 Optoelectronic Component Reliability and Failure Analysis.- 5.2 Temperature Cycling Tests of Laser Modules.- 5.3 An Experimental and Theoretical Investigation of Degradation in Semiconductor Lasers Resulting from Electrostatic Discharge.- 5.4 Reliability Testing of Planar InGaAs Avalanche Photodiodes.- VI. Compound Semiconductor Reliability.- 6.1 Status of Compound Semiconductor Device Reliability.- 6.2. Investigation into Molecular Beam Epitaxy-Grown FETs and HEMTs.- 6.3 Reliability of GaAs MESFETs.- 6.4 Hydrogen Effects on Reliability of GaAs MMICs.- 6.5 Temperature Distribution on GaAs MESFETs: Thermal Modeling and Experimental Results.- VII. High-Speed Circuit Reliability.- 7.1 High Speed IC Reliability: Concerns and Advances.- 7.2 Reliability of short channel silicon SOI VLSI Devices and Circuits.- 7.3 Special Reliability Issues and Radiation Effects of High Speed ICs.- 7.4 Reliability of High Speed HEMT Integrated Circuits and Multi-2DEG Structures.- 7.5 AlGaAs as a Dielectric on GaAs for Digital IC'S: Problems and Solutions.- Appendix A. Reliability Stress Screening.- Appendix B. Lifetime Extrapolation and Standardization of Tests.
Subject : Computer engineering.
Subject : Engineering.
Subject : System safety.
Added Entry : A Christou
: B A Unger
Parallel Title : Proceedings of the NATO Advanced Research Workshop, Heraklion, Crete, Greece, June 4-9, 1989
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