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" Semiconductor Interfaces at the Sub-Nanometer Scale "
edited by H.W.M. Salemink, M.D. Pashley.
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BL
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| Record Number
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774987
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b594982
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| Main Entry
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edited by H.W.M. Salemink, M.D. Pashley.
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Semiconductor Interfaces at the Sub-Nanometer Scale\ edited by H.W.M. Salemink, M.D. Pashley.
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| Publication Statement
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Dordrecht : Springer Netherlands : Imprint : Springer, 1993
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| Series Statement
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NATO ASI series., Series E,, Applied sciences ;, 243.
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(268 pages)
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| ISBN
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9401049009
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: 940112034X
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: 9789401049009
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: 9789401120340
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| Contents
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I. Epitaxial Growth of Semiconductors --; "Surface Atomic Processes during Epitaxial Growth" --; "Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors" --; "Surface Chemistry in the Si/Ge GSMBE System Studied Using RHEED" --; "Diffusion of Si in?-Doped GaAs Studied by Magneto Transport" --; "Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status" --; "A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy" --; "The Role of Surface Reconstructions in MBE Growth of GaAs" --; "A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice" --; "Resonant Tunnelling via the Bound States of Shallow Donors" --; II. Electronic Properties of Semiconductor Interfaces --; "Engineering of Semiconductor Heterostructures by Ultrathin Control Layers" --; "Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructures" --; "Dipole Layers at GaAs Heterojunctions and Their Investigation" --; "Clustering and Correlations on GaAs-Metal Interface" --; III. Atomic Scale Analysis of Semiconductor Interfaces --; "Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces" --; "Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level" --; "Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping" --; IV. Group IV Materials --; "Group IV Strained Layer Systems" --; "MISFIT Accommodation during Heteroepitaxial Growth" --; "Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEED" --; "Optical Properties of Imperfect Si-Ge Heterostructures" --; "Si1-x-yGexCy Growth and Properties of the Ternary System" --; "Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy" --; V. Nanometer Scale Devices --; "Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures" --; "Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs Heterostructures Grown on Non-(100)-Oriented Substrates?" --; "Strained Layer Quantum Well Semiconductor Lasers" --; List of Participants.
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| Abstract
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This book comprises review papers by leading scientists in the fields of semiconductor growth, analysis and device structures. In particular, it contains reviews of the state-of-the-art in the following topics:<br/> (a) theoretical and experimental treatment of epitaxial growth;<br/> (b) electronic bandstructure on the atomic to nanometer scale in semiconductor interfaces;<br/> (c) analysis of semiconductor interfaces and superlattices by photo electrospectroscopy, HRTEM and STM;<br/> (d) discussion of relevant properties and criteria in Group IV and III--V devices.<br/> All the reviews place an emphasis on the relevant properties on the atomic to nanometer scale as this is extremely important for superlattice structures and devices.<br/> For those working in semiconductor superlattices, MBE and ultra-thin-layer (quantum) phenomena: the book provides a state of the art review and extensive reference to recent work.<br/>
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| Subject
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Epitaxy -- Congresses.
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Nanostructured materials -- Congresses.
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Semiconductors -- Surfaces -- Congresses.
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| Added Entry
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H W M Salemink
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M D Pashley
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| Parallel Title
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Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992
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