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" High throughput manufacturing of silicon nanobridges for the fabrication of 3D gate-all-around field effect transistors "
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Latin Dissertation
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| Language of Document
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English
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| Record Number
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802858
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| Doc. No
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TL48036
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| Call number
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1639601029; 3646363
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| Main Entry
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Neville-Shepard, Meredith Diane
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| Title & Author
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High throughput manufacturing of silicon nanobridges for the fabrication of 3D gate-all-around field effect transistors
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\ Jin Yong Oh
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Islam, M. Saif
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| College
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University of California, Davis
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| Date
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2014
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| Degree
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Ph.D.
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2014
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| field of study
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Electrical and Computer Engineering
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| Page No
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178
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| Note
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Committee members: Amitharajah, Rajeevan; Horsley, David
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| Note
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Place of publication: United States, Ann Arbor; ISBN=978-1-321-36357-9
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| Abstract
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Self-assembled nanowires chemically synthesized by bottom-up approaches have attracted considerable attention due to their properties that are not common in their bulk or thin film counterparts. Their potential to offer novel functionality opens up opportunities for innovative genres of devices. Indeed, a number of innovative devices, such as transistors, diodes, bio/chemical sensors, photovoltaic devices, and even embryonic low-density integrated circuits, have been demonstrated by using various kinds of nanowires. In contrast to nanostructured materials created by the microfabrication technology pursued by the microelectronics industry, self-assembled nanowires inheritedly exhibit a high degree of variability in their dimensions, densities, locations, and alignment, etc. Despite the promise of nanowires, such uncertainty prevents them from utilization in mass-manufacturing processes and large-scale device integration.
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| Subject
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Electrical engineering; Materials science
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| Descriptor
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Applied sciences;Bottom-up;Field effect transistors;Nanobridges;Nanowires;Silicon nanostructures;Vapor-liquid-solid growth
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| Added Entry
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Islam, M. Saif
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| Added Entry
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University of California, Davis
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Electrical and Computer Engineering
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