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" Engineering model of III-nitride power heterostructure field effect transistor on silicon substrate "
Mohammad Mirwazul Islam
Simin, Grigory
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Latin Dissertation
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| Language of Document
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English
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| Record Number
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804413
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| Doc. No
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TL49243
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| Call number
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1874575553; 10240328
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| Main Entry
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Kohistany, M. Lyla
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| Title & Author
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Engineering model of III-nitride power heterostructure field effect transistor on silicon substrate\ Mohammad Mirwazul IslamSimin, Grigory
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| College
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University of South Carolina
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| Date
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2016
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| Degree
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Ph.D.
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| field of study
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Electrical Engineering
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| student score
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2016
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| Page No
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97
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| Note
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Committee members: Chandrashekhar, MVS; Khan, Jamil A.; Wang, Guoan
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| Note
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Place of publication: United States, Ann Arbor; ISBN=978-1-369-56508-9
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| Abstract
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In modern society, the demand for power consumption is increasing rapidly and the need of energy savings is now an issue of global importance. Highly efficient power converters and power conditioning systems operating with wide range of traditional as well as novel renewable and clean energy sources, are playing crucial role in energy saving. Si converters have already reached their limitation in terms of switching frequency and breakdown voltage/on-resistance ratio. Research is going on all around the world and it is now well accepted that significant improvement in power conversion efficiency and speed can only be achieved using beyond Si devices, such as SiC and GaN based. GaN based converters have shown great promises for higher conversion efficiency and switching speed. It is now crucial to develop accurate models that can assist in design and fabrication of GaN based power electronics.
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| Subject
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Electrical engineering
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| Descriptor
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Applied sciences;Bulk current;Current collapse;GaN model;HFET;Power switching
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| Added Entry
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Simin, Grigory
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| Added Entry
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Electrical EngineeringUniversity of South Carolina
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