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" Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 804985
Doc. No : TL49822
Call number : ‭2025922935;‮ ‬10682412‬
Main Entry : Alshammari, Mohammed
Title & Author : Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications\ Wenwen LiChowdhury, Srabanti
College : University of California, Davis
Date : 2017
Degree : Ph.D.
field of study : Electrical and Computer Engineering
student score : 2017
Page No : 160
Note : Committee members: Gu, Q. Jane; Islam, M. Saif
Note : Place of publication: United States, Ann Arbor; ISBN=978-0-355-76427-7
Abstract : Gallium nitride (GaN) is proving itself as the preferred material for high-power and high-frequency applications. Due to the increasing availability of bulk GaN substrates, vertical GaN transistors are coming to the forefront of research. Vertical structure is suitable for high-power applications as it minimizes surface-related dispersion issues prevailing in lateral high-electron-mobility transistors (HEMTs) and simultaneously provides a more economical solution for the same current rating.
Subject : Electrical engineering
Descriptor : Applied sciences;Gallium nitride;Metal Oxide Semiconductor Vertical Field Electron Transistors;Static Induction Transistors
Added Entry : Chowdhury, Srabanti
Added Entry : Electrical and Computer EngineeringUniversity of California, Davis
copyhttps://lib.clisel.com/site/catalogue/804985
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