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" Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications "
Dong Ji
Chowdhury, Srabanti
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Latin Dissertation
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| Language of Document
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English
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| Record Number
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804986
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| Doc. No
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TL49823
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| Call number
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2025922937; 10682425
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| Main Entry
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Abraham, Monnie
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| Title & Author
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Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications\ Dong JiChowdhury, Srabanti
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| College
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University of California, Davis
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| Date
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2017
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| Degree
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Ph.D.
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| field of study
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Electrical and Computer Engineering
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| student score
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2017
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| Page No
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155
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| Note
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Committee members: Islam, M. Saif; Luhmann, Neville C.
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| Note
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Place of publication: United States, Ann Arbor; ISBN=978-0-355-76428-4
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| Abstract
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Gallium nitride (GaN)-based devices have entered the power electronics market and shown excellent progress in the medium power conversion applications. For power conversions applications > 10 kW, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, thus provides a more economical solution for high-voltage and high-current applications. Moreover, the vertical geometry is attractive for its dispersion-free performance without passivation, a phenomenon that causes high dynamic on-state resistance (<i>R</i><sub>on</sub>) in lateral geometry high electron mobility transistors (HEMTs).
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| Subject
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Electrical engineering
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| Descriptor
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Applied sciences;Cavet;Current aperture vertical electron transistor;Gallium nitride;Ogfet;Power transistor;Vertical transistor
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| Added Entry
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Chowdhury, Srabanti
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Electrical and Computer EngineeringUniversity of California, Davis
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