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" Silicon Nanowire Based Field Ionization Devices "
Kazim Gurkan Polat
Islam, M. Saif
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Latin Dissertation
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| Language of Document
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English
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| Record Number
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805066
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| Doc. No
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TL49910
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| Call number
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2047668659; 10689526
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| Main Entry
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Habhab, Nadia
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| Title & Author
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Silicon Nanowire Based Field Ionization Devices\ Kazim Gurkan PolatIslam, M. Saif
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| College
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University of California, Davis
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| Date
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2017
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| Degree
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Ph.D.
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| field of study
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Electrical and Computer Engineering
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| student score
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2017
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| Page No
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86
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| Note
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Committee members: Hihath, Joshua; Seker, Erkin
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| Note
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Place of publication: United States, Ann Arbor; ISBN=978-0-355-96956-6
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| Abstract
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Nanomaterials have significant use in sensor applications, specifically gas sensors due to their fine-tuning capability for desired sensor performance by controlling nanostructures. Silicon nanowires (Si NWs) are one of these nanostructures that has become popular due to its established fabrication, compatibility and great performance. While Si NWs have been studied widely for gas sensing applications, their geometry optimization and utilizing these structures as scanning field ionization current microscopy has not been explored.
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| Subject
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Electrical engineering; Physics
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| Descriptor
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Pure sciences;Applied sciences;Device;Field ionization;Nanowire;Semiconductor;Silicon
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| Added Entry
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Islam, M. Saif
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| Added Entry
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Electrical and Computer EngineeringUniversity of California, Davis
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