An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs

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" An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs "
Al-Harbi, Talal S.

Document Type	:	Latin Dissertation
Record Number	:	827728
Doc. No	:	TLets245792
Main Entry	:	Al-Harbi, Talal S.
Title & Author	:	An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs\ Al-Harbi, Talal S.
College	:	Loughborough University
Date	:	1996
student score	:	1996
Degree	:	Thesis (Ph.D.)
Abstract	:	MOSFET devices have, recently, been considered the basic building element in any electronic IC circuit or system. The great advances achieved by modem technologies has made it possible to scale-down considerably the MOSFET device (channel length L smaller than 0.5μm and oxide thickness smaller than 400Å) which appreciably influences the device performance and its operating parameters.
Subject	:	Components
Added Entry	:	Loughborough University