رکورد قبلیرکورد بعدی

" Silicon-molecular beam epitaxy. "


Document Type : BL
Record Number : 844307
Title & Author : Silicon-molecular beam epitaxy.\ editors, Erich Kasper, John C. Bean.
Publication Statement : Boca Raton, FL :: CRC Press, Taylor & Francis Group,, [2018]
Series Statement : CRC revivals
Page. NO : 1 online resource
ISBN : 1351076620
: : 1351085077
: : 1351093525
: : 1351101978
: : 9781351076623
: : 9781351085076
: : 9781351093521
: : 9781351101974
: 1315897520
: 9781315897523
Notes : Originally published 1988 by CRC Press.
Bibliographies/Indexes : Includes bibliographical references and index.
Contents : 9. Principles of Heteroepitaxy 10. Epitaxial Silicides 11. Silicon-Based Semiconductor Heterostructures 12. Assessment of Layers 13. Industrial Application: Perspective and Requirements 14. Industrial Application: Possible Approaches 15. Molecular Beam Epitaxy of Silicon Materials: A Bibliography 1962 -- 1985.
Abstract : This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Subject : Molecular beam epitaxy.
Subject : Silicon.
Subject : Molecular beam epitaxy.
Subject : SCIENCE-- Physics-- Electricity.
Subject : SCIENCE-- Physics-- Electromagnetism.
Subject : Silicon.
Dewey Classification : ‭537.622‬
LC Classification : ‭QC611.6.M64‬
Added Entry : Bean, John C., (John Condon),1950-
: Kasper, Erich.
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