| Document Type
|
:
|
BL
|
| Record Number
|
:
|
859153
|
| Main Entry
|
:
|
Lin, Yu-Chuan
|
| Title & Author
|
:
|
Properties of synthetic two-dimensional materials and heterostructures /\ Yu-Chuan Lin.
|
| Publication Statement
|
:
|
Cham, Switzerland :: Springer,, [2018]
|
|
|
:
|
, ©2018
|
| Series Statement
|
:
|
Springer theses
|
| Page. NO
|
:
|
1 online resource :: colour illustrations
|
| ISBN
|
:
|
3030003329
|
|
|
:
|
: 3030003337
|
|
|
:
|
: 9783030003326
|
|
|
:
|
: 9783030003333
|
|
|
:
|
3030003310
|
|
|
:
|
9783030003319
|
| Notes
|
:
|
"Doctoral Thesis accepted by Pennsylvania State University, State College, PA, USA."
|
| Bibliographies/Indexes
|
:
|
Includes bibliographical references.
|
| Contents
|
:
|
Intro; Supervisor's Foreword; Preface; Acknowledgments; Contents; Chapter 1: Two-Dimensional Materials; 1.1 Introduction; 1.2 Classification and Thermal Stability; 1.3 Graphene: The Beginning of 2D Materials Research; 1.4 Monolayer Transition Metal Dichalcogenides: Real 2D Semiconductors; 1.5 2D Materials as the Building Blocks for vdW Heterostructures; 1.5.1 Making vdW Heterostructures via Stacking Exfoliated 2D Layers; 1.5.2 Applications of vdW Heterostructures for Electrical and Optical Devices; 1.5.3 Interfacial Imperfection; References.
|
|
|
:
|
2.6.1 Scalable Process for Synthetic 2D SemiconductorsReferences; Chapter 3: Properties of Atomically Thin WSe2 Grown Via Metal-Organic Chemical Vapor Deposition; 3.1 Impact of Growth Conditions and Substrates on Properties of WSe2; 3.1.1 Introduction; 3.1.2 Experimental Methods; Material Synthesis; Materials Characterization; Device Fabrication and Tunneling Current Measurements; 3.1.3 Results and Discussion; 3.1.4 Conclusions for Sect. 3.1; 3.2 Toward Large-Area and Epitaxy-Grade WSe2; 3.2.1 Introduction; 3.2.2 Experimental Methods; Materials Characterization.
|
|
|
:
|
Chapter 2: Synthesis and Properties of 2D Semiconductors2.1 Introduction; 2.2 Molecular Absorption and Desorption Process During Thin-Film Deposition; 2.2.1 Nucleation and Growth; 2.2.2 Epitaxial Relationship Between Deposited Materials and Substrates; 2.3 Synthesis Techniques for 2D TMDC; 2.3.1 Powder Vaporization; 2.3.2 Metal-Organic Chemical Vapor Deposition; 2.3.3 Epitaxial Graphene Synthesis; 2.4 Vertical and Radical Heterostructures Based on Synthetic 2D Materials; 2.5 2D Materials Electronics: Interface Is Critical; 2.6 2D Semiconductors for Low-Power Electronic Applications.
|
|
|
:
|
Chapter 5: Atomically Thin Heterostructures Based on Monolayer WSe2 and Graphene5.1 Introduction; 5.2 Experimental Methods; 5.2.1 Growth and Properties of WSe2 Layers on Graphene; 5.2.2 Diode Fabrication; 5.2.3 LEEM for Assessment of the Graphene Layer Thickness; 5.3 Results and Discussion; 5.4 Conclusions; References; Chapter 6: Tuning Electronic Transport in WSe2-Graphene; 6.1 Introduction; 6.2 Experimental Methods; 6.3 Results and Discussion; 6.3.1 WSe2 Synthesis and Buffer-Layer Decoupling; 6.3.2 LEEM/LEER Measurements and Analysis.
|
|
|
:
|
Impurity of Precursor and Growth Steps of Epitaxial WSe2Electrolyte-Gating Electrical Measurement; 3.2.3 Results and Discussion; Epitaxial Growth of WSe2; Kinetics for WSe2 Growth; Domain Boundaries of Epitaxial WSe2; WSe2-Sapphire Interface; Electronic Transport of Epitaxial WSe2; 3.3 Conclusions; References; Chapter 4: Direct Synthesis of van der Waals Solids; 4.1 Introduction; 4.2 Experimental Methods; 4.2.1 Materials Synthesis; 4.2.2 Fabrication and Measurement of MoS2 Photosensors; 4.2.3 Materials Characterization; 4.3 Results and Discussion; 4.4 Conclusions; References.
|
| Abstract
|
:
|
This thesis represents a significant advance in our understanding of the synthesis and propertiesof two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.
|
| Subject
|
:
|
Graphene.
|
| Subject
|
:
|
Heterostructures.
|
| Subject
|
:
|
Semiconductors.
|
| Subject
|
:
|
Condensed matter physics (liquid state solid state physics)
|
| Subject
|
:
|
Electronic devices materials.
|
| Subject
|
:
|
Graphene.
|
| Subject
|
:
|
Heterostructures.
|
| Subject
|
:
|
Materials science.
|
| Subject
|
:
|
Nanotechnology.
|
| Subject
|
:
|
Semi-conductors super-conductors.
|
| Subject
|
:
|
Semiconductors.
|
| Subject
|
:
|
TECHNOLOGY ENGINEERING-- Mechanical.
|
| Dewey Classification
|
:
|
621.38152
|
| LC Classification
|
:
|
TK7871.85
|