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BL
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| Record Number
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889883
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| Main Entry
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Liu, Cheng-hua
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| Title & Author
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Electrical and optoelectronic properties of the nanodevices composed of two-dimensional materials : : graphene and molybdenum (IV) disulfide /\ Cheng-hua Liu.
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| Publication Statement
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Singapore :: Springer,, [2018]
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, ©2018
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| Series Statement
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Springer Theses, Recognizing Outstanding Ph. D. Research,
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| Page. NO
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1 online resource
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| ISBN
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9789811313554
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: 9789811313561
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: 9811313555
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: 9811313563
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9789811313547
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9811313547
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| Bibliographies/Indexes
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Includes bibliographical references.
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| Contents
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Intro; Supervisor's Foreword; Abstract; Acknowledgements; Contents; 1 Introduction; References; 2 Theoretical Background; 2.1 Physical Properties of Graphene; 2.1.1 Electrical Structure and Zero Band Gap; 2.1.2 Pseudospin; 2.1.3 Klein Tunneling; 2.1.4 Quantum Hall Effect; 2.1.5 Shubnikov-de Haas Oscillation and Massless Effective Mass; 2.1.6 Quantum Hall Plateau-Plateau Transition; 2.1.7 Weak Localization; 2.2 Molybdenum Disulfide (MoS2); 2.2.1 Photoconductivity Effect; 2.2.2 Persistent Photoconductivity; References; 3 Experimental Methods; 3.1 Resist-Free Fabrication.
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3.2 Physical Property Measurement System3.3 Optical Measurement Systems; 3.4 Atomic Force Microscopy; 3.5 OTS-Functionalized Substrates and Electrical Measurement Method; 3.5.1 OTS-Functionalized Substrates; 3.5.2 Two-Terminal Conductance Measurements; References; 4 Distinctive Magnetotransport of Graphene p-n-p Junctions via Resist-Free Fabrication and Controlled Diffusion of Metallic Contact; 4.1 Introduction; 4.2 Fabrication; 4.3 Experimental Results; 4.4 Demonstration of p-n Junction Devices; 4.5 Conclusion; References.
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5 Observation of Quantum Hall Plateau-Plateau Transition and Scaling Behavior of the Zeroth Landau Level in Graphene p-n-p Junction5.1 Introduction; 5.2 Fabrication; 5.3 Experimental Results; 5.3.1 The Doping Effect from Titanium Diffusion; 5.3.2 The Doping Effect Simulated by Theoretical Dipining Model; 5.3.3 Characteristics of Graphene p-n-p Junction Devices; 5.3.4 Quantum Hall Effect in p-n-p Junction; 5.3.5 Scaling Behavior; 5.3.6 The MR and the Distribution of the Energy Levels of the LLs; 5.4 Conclusion; References.
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6 Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect6.1 Introduction; 6.2 Fabrication; 6.3 Measurement Method; 6.4 Experimental Results and Discussion; 6.4.1 The PPC Effect in a Monolayer MoS2 Transistor; 6.4.2 Temperature Dependence of PPC Relaxation; 6.4.3 The Subtract Effect of PPC; 6.4.4 Discussion of PPC Mechanism; 6.4.5 The Relationship Between the PPC Effect and Transport Behavior; 6.4.6 Fitting of the PPC Relaxation Curves; 6.4.7 Gate Voltage Dependence of the PPC; 6.4.8 Transport Characteristics of the MoS2 FET.
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6.4.9 Carrier Mobility Dependence of the PPC6.5 Conclusion; References; 7 Conclusion.
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| Abstract
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This thesis focuses on the transport and magneto-transport properties of graphene p-n-p junctions, such as the pronounced quantum Hall effect, a well-defined plateau-plateau transition point, and scaling behavior. In addition, it demonstrates persistent photoconductivity (PPC) in the monolayer MoS2 devices, an effect that can be attributed to random localized potential fluctuations in the devices. Further, it studies scaling behavior at zeroth Landau level and high performance of fractional values of quantum Hall plateaus in these graphene p-n-p devices. Moreover, it demonstrates a unique and efficient means of controlling the PPC effect in monolayer MoS2. This PPC effect may offer novel functionalities for MoS2-based optoelectronic applications in the future.
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| Subject
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Graphene.
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Molecular machinery.
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Molybdenum disulfide.
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Optoelectronic devices.
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Graphene.
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Molecular machinery.
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Molybdenum disulfide.
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Optoelectronic devices.
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TECHNOLOGY ENGINEERING-- Mechanical.
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| Dewey Classification
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621.3815/2
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| LC Classification
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TA1750
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