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BL
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| Record Number
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890209
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| Main Entry
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Akiba, Kazuto
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| Title & Author
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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions /\ Kazuto Akiba.
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| Publication Statement
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Singapore :: Springer,, [2019]
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| Series Statement
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Springer theses
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| Page. NO
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1 online resource
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| ISBN
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9789811371073
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: 9789811371080
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: 9789811371097
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: 9811371075
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: 9811371083
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: 9811371091
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9789811371066
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9811371067
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| Notes
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"Doctoral Thesis accepted by the University of Tokyo, Tokyo, Japan."
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| Bibliographies/Indexes
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Includes bibliographical references.
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| Contents
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Intro; Supervisor's Foreword; Publications; Acknowledgements; Contents; List of Figures; List of Tables; 1 General Introduction; 1.1 Exotic States Near the Metal-Insulator Transition; 1.2 Topological Materials; 1.3 General Issues and Solutions; References; 2 Experimental Methods; 2.1 Essentials of the Electrical Transport Measurements; 2.2 Resistivity Measurements Under Pressure; 2.3 Generation of Pulsed Magnetic Fields; 2.4 Cryostat System in High-Field Measurements; 2.5 Resistivity Measurements in Pulsed Magnetic Fields; 2.6 Magnetization Measurements in Pulsed Magnetic Fields
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2.7 Ultrasonic Measurements in Pulsed Magnetic Fields2.8 Samples; 2.8.1 Black Phosphorus; 2.8.2 PbTe and Pb1-xSnxTe; References; 3 Black Phosphorus; 3.1 Basic Properties of Black Phosphorus; 3.1.1 Crystal Structure; 3.1.2 Energy Band Structure; 3.1.3 Physical Properties at Ambient Pressure; 3.1.4 Physical Properties Under Pressure; 3.2 Purpose of the Study; 3.3 Results and Discussion; 3.3.1 Temperature Dependence of the Resistivity at Various Pressures; 3.3.2 Quantum Transport Phenomena in Semiconducting Black Phosphorus-Magneto-Phonon Resonance-
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3.3.3 Quantum Transport Phenomena in Semimetallic Black Phosphorus -Shubnikov-de Haas Oscillation-3.3.4 Analyses of the In-Plane Transport Properties Based on the Two-Carrier Model; 3.3.5 Exploration of Unconventional Electronic Phases on the Boundary Between Semiconducting and Semimetallic States; 3.4 Summary; References; 4 Lead Telluride; 4.1 Basic Properties of PbTe; 4.1.1 Crystal and Energy Band Structure; 4.1.2 Physical Properties of PbTe; 4.1.3 Physical Properties of Pb1-xSnxTe; 4.1.4 Topological Properties of Pb1-xSnxTe; 4.1.5 Ferroelectric Transition in Pb1-xSnxTe
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4.1.6 Physical Properties of Pressurized PbTe4.2 Purpose of the Study; 4.3 Results and Discussion; 4.3.1 Pristine PbTe at Ambient Pressure; 4.3.2 Pb0.7Sn0.3Te; 4.4 Summary; References; 5 Concluding Remarks; 5.1 Summary of This Thesis; 5.2 Future Prospects; Reference; 6 Appendix: Computer Programs Composed for This Study; 6.1 Numerical Lock-In; 6.2 Data Acquisition with Tektronix DPO5104B; 6.3 Numerical Analysis of Ultrasonic Measurements; Curriculum Vitae
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| Abstract
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This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.
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| Subject
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Narrow gap semiconductors.
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| Subject
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Narrow gap semiconductors.
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| Subject
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SCIENCE-- Physics-- Electricity.
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| Subject
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SCIENCE-- Physics-- Electromagnetism.
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| Dewey Classification
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537.6223
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| LC Classification
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QC611.8.N35
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