| Document Type
|
:
|
BL
|
| Record Number
|
:
|
891607
|
| Main Entry
|
:
|
Dinh, Toan
|
| Title & Author
|
:
|
Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors /\ Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao, authors ; Andreas Oechsner, editor.
|
| Publication Statement
|
:
|
Singapore :: Springer,, [2018]
|
|
|
:
|
, ©2018
|
| Series Statement
|
:
|
SpringerBriefs in applied sciences and technology
|
| Page. NO
|
:
|
1 online resource
|
| ISBN
|
:
|
9789811325717
|
|
|
:
|
: 9789811325724
|
|
|
:
|
: 9811325715
|
|
|
:
|
: 9811325723
|
|
|
:
|
9789811325700
|
|
|
:
|
9811325707
|
| Bibliographies/Indexes
|
:
|
Includes bibliographical references.
|
| Contents
|
:
|
Intro; Preface; Acknowledgements; Contents; 1 Introduction toSiC andThermoelectrical Properties; 1.1 Background; 1.2 Silicon Carbide; 1.3 Growth ofSiC; 1.4 Thermoelectrical Properties; 1.5 High-Temperature SiC MEMS Sensors; References; 2 Fundamentals ofThermoelectrical Effect inSiC; 2.1 Thermoresistive Effect; 2.1.1 Physical Parameters andDefinitions inSemiconductors; 2.1.2 Single-Crystalline SiC; 2.1.3 Polycrystalline SiC; 2.1.4 Amorphous SiC; 2.2 Thermoelectronic Effects; 2.3 Thermocapacitive Effect; 2.4 Thermoelectric Effect
|
|
|
:
|
2.5 Recent Advances inCharacterisation ofThermoelectrical Effects inSiC atHigh Temperatures2.5.1 Experimental Set-upforCharacterisation ofThermoelectrical Effect; 2.5.2 Thermoresistive Effect inSingle Layer ofSiC; 2.5.3 Thermoelectrical Effect inMulti-layers ofSiC; 2.6 4H-SiC p-n Junctions; 2.7 Other Thermoelectrical Effects atHigh Temperatures; 2.7.1 Thermoelectric Effect; 2.7.2 Thermocapacitive Effect; References; 3 Desirable Features forHigh-Temperature SiC Sensors; 3.1 Sensitivity; 3.2 Linearity; 3.3 Thermal Time Response; 3.4 Low Power Consumption
|
|
|
:
|
3.5 Stability andOther Desirable FeaturesReferences; 4 Fabrication ofSiC MEMS Sensors; 4.1 Growth andDoping; 4.1.1 Growth ofSiC; 4.1.2 Doping ofSiC; 4.2 Etching ofSiC; 4.2.1 Electrochemical Etching; 4.2.2 Chemical Etching; 4.2.3 Dry Etching orReactive-Ion Etching (RIE); 4.3 Ohmic andSchottky Contacts toSiC; 4.3.1 Ohmic Contact; 4.3.2 Schottky Contact; 4.4 Fabrication Processes ofSiC MEMS Sensors; 4.4.1 Surface Micromachining; 4.4.2 Bulk Micromachining; 4.4.3 Fabrication ofMEMS Device withIntegrated Cooling System; References
|
|
|
:
|
5 Impact ofDesign andProcess onPerformance ofSiC Thermal Devices5.1 Substrate Influence; 5.2 Doping Influence; 5.3 Morphologies; 5.4 Deposition Temperature; 5.5 Geometry andDimension; References; 6 Applications ofThermoelectrical Effect inSiC; 6.1 Temperature Sensors, Temperature Control/Compensation andThermal Measurement; 6.1.1 Thermistors; 6.1.2 p-n Junction Temperature Sensors; 6.2 Thermal Flow Sensors; 6.2.1 Hot-Wire andHot-Film Flow Sensors; 6.2.2 Calorimetric Flow Sensors; 6.2.3 Time-of-Flight Flow Sensors; 6.3 Convective Accelerometers andGyroscopes
|
|
|
:
|
6.3.1 Convective Accelerometers6.3.2 Convective Gyroscopes; 6.4 Other Applications; 6.4.1 Combustible Gas Sensors; 6.4.2 SiC MEMS withIntegrated Heating, Sensing andMicrofluidic Cooling; References; 7 Future Prospects ofSiC Thermoelectrical Sensing Devices; 7.1 Novel Platforms ofSiC Films onInsulation Substrates; 7.2 Integration ofSiC Thermoelectrical Devices withOther Materials andDevices; 7.3 SiC Thermal Actuators; 7.4 Challenges andFuture Developments ofSiC Sensing Devices; References
|
| Abstract
|
:
|
"This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects."--
|
| Subject
|
:
|
Silicon carbide-- Thermal properties.
|
| Subject
|
:
|
Thermoelectricity.
|
| Subject
|
:
|
Nanotechnology.
|
| Subject
|
:
|
Precision instruments manufacture.
|
| Subject
|
:
|
Silicon carbide-- Thermal properties.
|
| Subject
|
:
|
Spectrum analysis, spectrochemistry, mass spectrometry.
|
| Subject
|
:
|
TECHNOLOGY ENGINEERING-- Mechanical.
|
| Subject
|
:
|
Thermoelectricity.
|
| Dewey Classification
|
:
|
621.38152
|
| LC Classification
|
:
|
TK7871.15.S56
|
| Added Entry
|
:
|
Dao, Dzung Viet
|
|
|
:
|
Nguyen, Nam-Trung
|