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" Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications "
Cao, Y.Zhang, J.Li, X.Kosel, T.H.Fay, P.Hall, D.C.Zhang, X.B.Dupuis, R.D.Jasinski, J.B.Liliental-Weber, Z.
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AL
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| Record Number
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900647
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LA30p742jd
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| Title & Author
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Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications [Article]\ Cao, Y.Zhang, J.Li, X.Kosel, T.H.Fay, P.Hall, D.C.Zhang, X.B.Dupuis, R.D.Jasinski, J.B.Liliental-Weber, Z.
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2004
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| Abstract
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Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.
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