Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

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" Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells "
Hestroffer, K.Wu, F.Li, H.Lund, C.Keller, S.Speck, J. S.Mishra, U. K.

Document Type	:	AL
Record Number	:	900911
Doc. No	:	LA5kv6j5dt
Title & Author	:	Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells [Article]\ Hestroffer, K.Wu, F.Li, H.Lund, C.Keller, S.Speck, J. S.Mishra, U. K.
Date	:	2015
Title of Periodical	:	UC Office of the President