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" Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure "
Wen, FLiu, XZhang, QKareev, MPal, BCao, YFreeland, JWN'Diaye, ATShafer, PArenholz, EGu, LChakhalian, J
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AL
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901045
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LA1fz088n3
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Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure [Article]\ Wen, FLiu, XZhang, QKareev, MPal, BCao, YFreeland, JWN'Diaye, ATShafer, PArenholz, EGu, LChakhalian, J
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2019
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Lawrence Berkeley National Laboratory
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© 2019 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the x-ray absorption spectroscopy at Ni L 2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr2IrO4/LaNiO3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros-Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden-Popper phases of Ir-based oxides.
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