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" Transmission electron microscopy of semiconductor nanostructures : "


Document Type : BL
Record Number : 947918
Doc. No : b702288
Main Entry : Rosenauer, Andreas,1964-
Title & Author : Transmission electron microscopy of semiconductor nanostructures : : an analysis of composition and strain state /\ Andreas Rosenauer.
Publication Statement : Berlin ;New York :: Springer,, ©2003.
Series Statement : Springer tracts in modern physics ;; 182
Page. NO : xii, 238 pages :: illustrations (some color) ;; 24 cm.
ISBN : 3540004149
: : 9783540004141
Bibliographies/Indexes : Includes bibliographical references and index.
Contents : 1. Introduction -- pt. I. Theoretical Fundamentals of Transmission Electron Microscopy -- 2. Electron Diffraction -- 3. Image Formation -- pt. II. Digital Image Analysis -- 4. Strain State Analysis -- 5. Lattice Fringe Analysis -- pt. III. Applications -- 6. Introduction -- 7. In[subscript 0.6]Ga[subscript 0.4]As/GaAs(001) SK Layers -- 8. InAs Quantum Dots -- 9. Electron Holography: AlAs/GaAs Superlattices -- 10. Outlook -- A. List of Acronyms Used -- B. Fourier Transform, Convolutions and [delta]-"Function."
Abstract : "This book provides tools well suited for the quantitative investigation of semiconductors by transmission electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration."--Jacket.
Subject : Semiconductors-- Analysis.
Subject : Semiconductors-- Microscopy.
Subject : Transmission electron microscopy.
Subject : 33.68 surfaces, interfaces and thin layers.
Subject : 51.39 materials testing, properties of materials: other.
Subject : Durchstrahlungselektronenmikroskopie
Subject : Durchstrahlungselektronenmikroskopie.
Subject : Física moderna.
Subject : Nanostruktur
Subject : Nanostruktur.
Subject : Semiconductors-- Analysis.
Subject : Transmission electron microscopy.
Subject : Verbindungshalbleiter
Subject : Verbindungshalbleiter.
Dewey Classification : ‭621.3815/2‬
LC Classification : ‭QD139.S34‬‭R67 2003‬
: ‭QC1‬‭.S797 v.182 2003‬
NLM classification : ‭33.68‬bcl
: ‭51.39‬bcl
: ‭PHY 135f‬stub
: ‭PHY 691f‬stub
: ‭PHY 704f‬stub
: ‭UD 9310‬rvk
: ‭UH 6300‬rvk
: ‭UP 3150‬rvk
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