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" Matching properties of deep sub-micron MOS transistors / "
by Jeroen A. Croon, Willy Sansen and Herman E. Maes.
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BL
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| Record Number
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989666
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b744036
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| Main Entry
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Croon, Jeroen A.
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| Title & Author
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Matching properties of deep sub-micron MOS transistors /\ by Jeroen A. Croon, Willy Sansen and Herman E. Maes.
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| Publication Statement
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New York :: Springer,, 2005.
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| Series Statement
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The Kluwer international series in engineering and computer science,; 851
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| Page. NO
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1 online resource (x, 206 pages) :: illustrations
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| ISBN
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0387243135
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: 0387243143
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: 6610612064
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: 9780387243139
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: 9780387243146
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: 9786610612062
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| Bibliographies/Indexes
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Includes bibliographical references (pages 193-203).
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| Contents
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Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book -- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions -- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions -- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions -- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions -- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions -- Conclusions, Future Work and Outlook. Conclusions. Future work -- Outlook.
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| Abstract
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"Matching Properties of Deep Sub-Micron MOS Transistors examines the matching properties of deep sub-micron MOS transistors. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions transistor mismatch has an increasing impact on digital circuits." "Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET."--Jacket.
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Metal oxide semiconductor field-effect transistors.
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Ingénierie.
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Metal oxide semiconductor field-effect transistors.
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TECHNOLOGY ENGINEERING-- Electronics-- Transistors.
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Metal oxide semiconductor field-effect transistors.
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| Dewey Classification
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621.3815/284
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| LC Classification
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TK7871.95.C76 2005eb
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| NLM classification
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TN32clc
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TN386clc
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| Added Entry
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Maes, H. E., (Herman E.)
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Sansen, Willy M. C.
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